Giant non-volatile magnetoelectric effects via growth anisotropy in Co40Fe40B20 films on PMN-PT substrates

Wang, J; Pesquera, David; Mansell, Rhodri; Dijken, Sebastiaan van; Cowburn, R. P.; Ghidini, M.; Mathur, N. D.

doi:10.1063/1.5078787

Cited by 33 publications

(31 citation statements)

References 39 publications

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“…This experiment shows that different in-plane (a1, a2) and out-of-plane (c) ferroelectric domains have a one-to-one correlation to magnetic domains with varying magnetic uniaxial anisotropy. Similar effects were observed in other ferromagnets: CoFe [72], CoFeB [73,74], Fe [75], La 1-x Sr x MnO-- 3 (LSMO) [76], Ni [77], and NiFe [78]. A key requirement for these observations is strong elastic pinning of magnetic domain walls onto ferroelectric domain walls [79].…”

Section: Controlled Ferroelectric and Multiferroic Domain Architecsupporting

confidence: 69%

Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures

et al. 2019

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The current burst of device concepts based on nanoscale domain-control in magnetically and electrically ordered systems motivates us to review the recent development in the design of domain engineered oxide heterostructures. The improved ability to design and control advanced ferroic domain architectures came hand in hand with major advances in investigation capacity of nanoscale ferroic states. The new avenues offered by prototypical multiferroic materials, in which electric and magnetic orders coexist, are expanding beyond the canonical low-energy-consuming electrical control of a net magnetization. Domain pattern inversion, for instance, holds promises of increased functionalities. In this review, we first describe the recent development in the creation of controlled ferroelectric and multiferroic domain architectures in thin films and multilayers. We then present techniques for probing the domain state with a particular focus on non-invasive tools allowing the determination of buried ferroic states. Finally, we discuss the switching events and their domain analysis, providing critical insight into the evolution of device concepts involving multiferroic thin films and heterostructures.

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Section: Controlled Ferroelectric and Multiferroic Domain Architecsupporting

confidence: 69%

Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures

et al. 2019

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“…To establish non-volatile magnetic switching for ME memory applications, symmetry-breaking mechanisms have been proposed and demonstrated. Among them are the use of competing magnetic anisotropies [190][191][192], partial poling of the piezoelectric layer [184,193,194], structural phase transitions in PMN-PT [195], ferroelastic domain switching [196], and fast strain dynamics [197][198][199]. Strain transfer from PMN-PT (or PZT [179,[200][201][202] and PZN-PT [179,190,196,203]) substrates to magnetic oxides has been shown to modify the magnetization, transition temperature, magnetoresistance, magnetic anisotropy or FMR.…”

Section: Electric-field Control Of Magnetismmentioning

confidence: 99%

Roadmap on Magnetoelectric Materials and Devices

et al. 2021

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The possibility to tune the magnetic properties of materials with voltage (converse magnetoelectricity) or to generate electric voltage with magnetic fields (direct magnetoelectricity) has opened new avenues in a large variety of technological fields, ranging from information technologies to healthcare devices and including a great number of multifunctional integrated systems such as mechanical antennas, magnetometers, radiofrequency (RF) tunable inductors, etc., which have been realized due to the strong strainmediated magnetoelectric (ME) coupling found in ME composites. The development of singlephase multiferroic materials (which exhibit simultaneous ferroelectric and ferromagnetic or antiferromagnetic orders), multiferroic heterostructures, as well as progress in other ME mechanisms, such as electrostatic surface charging or magneto-ionics (voltage-driven ion migration) have a large potential to boost energy efficiency in spintronics and magnetic actuators. This paper focuses on existing ME materials and devices and reviews the state of the art in their

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“…There are three distinct ways to achieve artificial magnetoelectric coupling [5]: via (i) strain, (ii) direct (spin) exchange, and (iii) charge coupling, see section 2. In strain coupled artificial multiferroics, piezoelectric crystal or thin film and magnetostrictive layer are elastically coupled leading to controllable magnetoelastic anisotropy due to propagation of electrostrain [70,[157][158][159][160][161][162][163][164] with a key requirement of strong elastic pinning of magnetic domain walls onto ferroelectric domain walls [165]. In exchange-biased multiferroic composites, the interaction occurs between a ferromagnet and intrinsic multiferroic with uncompensated antiferromagnetic order, such as BiFeO3 [21,98,166,167], YMnO3 [168] and LuMnO3 [118].…”

Section: Domain Imprintmentioning

confidence: 99%

Multiferroic heterostructures for spintronics

Gradauskaite

Meisenheimer

Müller

et al. 2020

Physical Sciences Reviews

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For next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.

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Giant non-volatile magnetoelectric effects via growth anisotropy in Co40Fe40B20 films on PMN-PT substrates

Cited by 33 publications

References 39 publications

Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures

Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures

Roadmap on Magnetoelectric Materials and Devices

Multiferroic heterostructures for spintronics

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