Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

Chen, Chun‐Nan; Su, Wei-Long; Chiang, Jih‐Chen; Lo, Ikai; Wang, Wan‐Tsang; Lee, Meng-En

doi:10.1016/j.physleta.2007.10.021

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“…A-and M-planes have been extensively investigated and proven to provide optical devices superior to those on conventional C-plane. [6][7][8][9] However, the investigations on the R-plane GaN are still lacking 10) and further investigation is needed.…”

Section: Introductionmentioning

confidence: 99%

Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN

Hao

Chen

Hao

2009

jjap

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Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of kÁp theory, we investigate the strain effects on the transition energies and optical properties in the R-plane (½10 1 12-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from À0:5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices.

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