2022
DOI: 10.1002/pssr.202100555
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Giant Optical Oscillator Strengths in Perturbed Hexagonal Germanium

Abstract: By means of ab initio calculations we demonstrate that perturbed hexagonal germanium is a superior material for active optoelectronic devices in the infrared spectral region. Perfect lonsdaleite germanium is a pseudodirect semiconductor, with a direct fundamental band gap but almost vanishing optical transitions. Perturbing the system by replacing a germanium atom with a silicon atom in the primitive cell increases the oscillator strength at the onset gap by orders of magnitude, with a concurrent blue shift of… Show more

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Cited by 9 publications
(2 citation statements)
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“… 14 Likewise, Belabbes et al evaluated the interband transition energies for uniaxially strained lonsdaleite germanium and Ge–Si alloy. 26 However, a thorough understanding of the structure–property relationship of uniaxially strained hexagonal germanium is essential to effectively comprehend the potential characteristics of light-emitting materials.…”
Section: Introductionmentioning
confidence: 99%
“… 14 Likewise, Belabbes et al evaluated the interband transition energies for uniaxially strained lonsdaleite germanium and Ge–Si alloy. 26 However, a thorough understanding of the structure–property relationship of uniaxially strained hexagonal germanium is essential to effectively comprehend the potential characteristics of light-emitting materials.…”
Section: Introductionmentioning
confidence: 99%
“…infrared light emission applications 14,17 . A priori, it is not obvious that hex-SiGe can serve as a gain medium for laser amplification since, according to the present status of our theoretical understanding 15,18,19 , a folded L-band remains dipole forbidden unless the translational symmetry is broken by e.g. alloying.…”
mentioning
confidence: 99%