2021
DOI: 10.1016/j.ceramint.2021.01.226
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Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition

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Cited by 14 publications
(6 citation statements)
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“…Ti contacts to α-Cr 2 O 3 and α-Ga 2 O 3 films were Ohmic in nature and were found to be stable within the range of T = 300−673 K. It was established that α-Ga 2 O 3 films are characterized by extremely low values of dark current density J D at room temperature and fine photoelectrical parameters J ph , J ph /J D , R * , D * , and EQE (see the table), which are comparable or superior to the results reported in other studies [1,[4][5][6][7]14]. Rise τ 1 and fall τ 2 photoresponse times determined at the levels of 0.9J L (J L is the net electric current in a film under UV irradiation) and 1.1J D , respectively, were 0.1 and ∼ 60 s for α-Ga 2 O 3 films.…”
supporting
confidence: 73%
See 1 more Smart Citation
“…Ti contacts to α-Cr 2 O 3 and α-Ga 2 O 3 films were Ohmic in nature and were found to be stable within the range of T = 300−673 K. It was established that α-Ga 2 O 3 films are characterized by extremely low values of dark current density J D at room temperature and fine photoelectrical parameters J ph , J ph /J D , R * , D * , and EQE (see the table), which are comparable or superior to the results reported in other studies [1,[4][5][6][7]14]. Rise τ 1 and fall τ 2 photoresponse times determined at the levels of 0.9J L (J L is the net electric current in a film under UV irradiation) and 1.1J D , respectively, were 0.1 and ∼ 60 s for α-Ga 2 O 3 films.…”
supporting
confidence: 73%
“…The lattice mismatch of α-Ga 2 O 3 and α-Cr 2 O 3 does not exceed 1%. This semiconductor with E g = 2.9−3.4 eV features intrinsic hole conductivity and is being studied extensively for the purpose of development of transparent conductive oxides, gas sensors, and photodetectors [12][13][14]. α-Ga 2 O 3 /α-Cr 2 O 3 structures may hold promise for the design of power devices and photodiodes.…”
mentioning
confidence: 99%
“…Under such conditions, photocurrent was generated and then amplified under external circuits' voltage. [44] Figure 6 reports the responsivity and photocurrent of the samples as a function of wavelength at the bias of 5 V. The wavelength ranges from 500 to 1100 nm. As the wavelength increases, the responsivity initially increases slightly and reaches its peak value at the wavelength of %800 nm.…”
Section: Resultsmentioning
confidence: 99%
“…Under such conditions, photocurrent was generated and then amplified under external circuits’ voltage. [ 44 ]…”
Section: Resultsmentioning
confidence: 99%
“…The advantage of these materials is that they are low cost, can be made from cheap and abundant materials, and are also easily reusable. In addition to their role in corrosion protection, their properties are of interest for various applications [4][5][6][7][8][9][10][11][12][13][14][15] such as electronic components, solar cells, or photocatalysis.…”
Section: Introductionmentioning
confidence: 99%