Giant Piezoelectricity on Si for Hyperactive MEMS

Baek, Seung Hyub; Park, J.; Kim, D. M.; Aksyuk, Vladimir A.; Das, Rasmi R.; Bu, Sang Don; Felker, D. A.; Lettieri, J.; Vaithyanathan, V.; Bharadwaja, S. S. N.; Bassiri‐Gharb, Nazanin; Chen, Y. B.; Sun, Haiping; Folkman, C. M.; Jang, Ho Won; Kreft, Dustin J.; Streiffer, S. K.; Ramesh, R.; Pan, Xiaoqing; Trolier-McKinstry, Susan; Schlom, Darrell G.; Rzchowski, M. S.; Blick, Robert H.; Eom, C. B.

doi:10.1126/science.1207186

Cited by 421 publications

(285 citation statements)

References 43 publications

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“…Many papers have reported the strain-induced magnetization changes in a wide range of MF layered composites (ferromagnetic (FM) ilms/ferroelectric (FE) substrates) such as Fe-Ga/(1 1 0) PMN-PT [11], Ni 80 Co 20 /(1 1 0) PZN-PT (lead zinc niobate-lead titanate) [12], FeGaB(1 1 0) PZN-PT In this study, Co 50 Fe 50 (CoFe) ilm was chosen to be the FM layer due to excellent soft magnetic properties, relatively high magnetostriction [20,21] and large saturated magnetization [22]. The (0 1 1)-oriented PMN-PT [23] was considered as the FE substrate due to its large in-plane anisotropic strains. The effect of magnetic layer thickness on ME coupling in CoFe/ PMN-PT heterostructures was investigated over a much wider thickness range, from 30 nm to 100 nm.…”

Section: Introductionmentioning

confidence: 99%

Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

Yang¹,

Morley²,

Sharp³

et al. 2015

J. Phys. D: Appl. Phys.

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[13], Fe 3 O 4 /PZN-PT [14], NiFe 2 O 4 /(0 0 1) PMN-PT [15] and Ni/(1 1 0) PMN-PT [16]. Kim et al [17] studied the effects of the thickness and composition of the magnetic Co x Pd 1−x layer on the ME coupling strength. The ME constant (α) increased from 2 × 10 −7 s m −1 to 2.5 × 10 −7 s m −1 as the ilm thickness of Co 0.25 Pd 0.75 decreased from 30 nm to 10 nm. However, for both Co 0.22 Pd 0.0.78 and Co 0.18 Pd 0.0.82 compositions, α for the 10 nm thick magnetic ilm was lower than that for the 20 nm thick magnetic ilm due to the change of perpendicular magnetic anisotropy (PMA) at 10 nm. In addition, for ultrathin magnetic layers (<20 nm), the magnetostriction constant (λ) can be strongly inluenced by the thickness [18] according to the formula λ = λ b + λ i /t, where λ b is the magnetostriction of the bulk, λ i is the interfacial contribution and t is the magnetic layer thickness [19]. However, the effect of varying λ with t on ME coupling was not considered by Kim et al. AbstractCo 50 Fe 50 /(0 1 1)-oriented lead magnesium niobate-lead titanate (PMN-PT) multiferroic (MF) heterostructures were fabricated by RF sputtering magnetic ilms onto PMN-PT substrates. The effect of magnetic layer thickness (30 nm to 100 nm) on the magnetoelectric (ME) coupling in the heterostructures was studied independently, due to the almost constant magnetostriction constant (λ = 40 ± 5 ppm) and similar as-grown magnetic anisotropies for all studied magnetic layer thicknesses. A record high remanence ratio (M r /M s ) tunability of 95% has been demonstrated in the 65 nm Co 50 Fe 50 /PMN-PT heterostructure, corresponding to a large ME constant (α) of 2.5 × 10 −6 s m −1 , when an external electric ield (E-ield) of 9 kV cm −1 was applied. Such an MF heterostructure provides considerable opportunities for E-ield-controlled multifunctional devices.

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Section: Introductionmentioning

confidence: 99%

Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

Yang¹,

Morley²,

Sharp³

et al. 2015

J. Phys. D: Appl. Phys.

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“…T he presence of functional properties in many perovskite materials 1,2 has pushed the development of integrating such crystals directly on silicon (Si) to realize a variety of new devices 3 . Since the first methods to epitaxially deposit perovskite thin films on Si were established 4 , the growth process has been carefully optimized 5 and single crystalline layers were fabricated even on large-scale 8 00 substrates 6 .…”

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confidence: 99%

A strong electro-optically active lead-free ferroelectric integrated on silicon

et al. 2013

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The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of r eff ¼ 148 pm V À 1 , which is five times larger than in the current standard material for electrooptical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

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“…These results also indicate that the ab initio structural determination is quite reliable and the electronic structure of the line defect is indeed considerably different from that of bulk NTO [8]. (1)(2)(3)(4)(5)(6)(7)(8) correspond to those labeled in a (modified from Ref. [7]).…”

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confidence: 78%

Dissecting Electronic Structure of a New Line Defect in NdTiO₃ by EELS

Mkhoyan

2017

Microsc Microanal

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Perovskite oxides are one of the most abundant natural materials on the Earth. The flexibility of the perovskite structure allows to accommodate cations of different sizes and valences. Wide variety of properties have been demonstrated in bulk perovskites, at their interfaces, or heterostructures made from them including room-temperature ferroelectricity [1], giant piezoelectricity [2], quantum oscillation [3] , two-dimensional superconductivity [4], and many more. The elemental diversity, stability even under offstoichiometry conditions, and variety of crystal symmetries in the perovskite structure make it a natural host for a range of defects as well. While several point and planar defects have been reported in perovskites [5,6] with some of them quite unique for perovskites, no new line defect, other than standard dislocations, has been observed until recently (Figure 1) [7].We characterize this new line defect, observed in perovskite NdTiO 3 (NTO) films, using a combination of high-resolution analytical scanning transmission electron microscopy (STEM) imaging, atomic-scale energy dispersive X-ray spectroscopy (EDX) and electron energy-loss spectroscopy (EELS), and ab initio calculations. Two high-angle annular dark-field (HAADF) STEM images of such NTO films with and without this new line defect are shown in Figs. 1a, b.The result of detailed EELS analysis of the defect core is presented in Figure 2. EELS data recorded across the core of the defect indicates distinct changes in its fine structure. Ti L 2,3 spectra show that Ti 3+ character changes to predominantly Ti 4+ when the probe moves from the bulk to the core of the defect. The transition is not abrupt and occurs over a distance of 1 nm from the defect center. O K EELS spectra also show changes in the fine structure across the defect. When compared with DFT+U calculations, these changes are in quantitative agreement in terms of the edge onset, onset peak height, and width of the second peak at 535-540 eV (Figure 2 d,e). The results indicate that the main differences between electronic states of Ti and O atoms occur at the boundary between defect and the bulk, and not at the core. These results also indicate that the ab initio structural determination is quite reliable and the electronic structure of the line defect is indeed considerably different from that of bulk NTO [8].

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Giant Piezoelectricity on Si for Hyperactive MEMS

Cited by 421 publications

References 43 publications

Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

A strong electro-optically active lead-free ferroelectric integrated on silicon

Dissecting Electronic Structure of a New Line Defect in NdTiO₃ by EELS

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Giant Piezoelectricity on Si for Hyperactive MEMS

Cited by 421 publications

References 43 publications

Giant electric field tunable magnetic properties in a Co50Fe50/lead magnesium niobate–lead titanate multiferroic heterostructure

Giant electric field tunable magnetic properties in a Co50Fe50/lead magnesium niobate–lead titanate multiferroic heterostructure

A strong electro-optically active lead-free ferroelectric integrated on silicon

Dissecting Electronic Structure of a New Line Defect in NdTiO3 by EELS

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Product

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Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

Dissecting Electronic Structure of a New Line Defect in NdTiO₃ by EELS