2022
DOI: 10.1002/adts.202100472
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Giant Shift Photovoltaic Current in Group V‐V Binary Nanosheets

Abstract: The bulk photovoltaic effect shift current (SC), a constant photocurrent generated by irradiating polar homogeneous non-centrosymmetric materials has lately emerged as a possible option for next-generation photovoltaic systems that may potentially overcome the Shockley-Queisser limits. The current work predicts gigantic and anisotropic SC with multiple peaks across a wide range of frequencies in pristine 2D monolayer 𝜶-AsP and 𝜶-NP based on first-principle calculations. The dominant SC tensors components hos… Show more

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Cited by 3 publications
(1 citation statement)
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“…Furthermore, the shift current in single-layer GeS (∼100 μA/V 2 ) exceeds that of conventional ferroelectric materials in the visible spectrum, such as BiFeO 3 (0.05 μA/V 2 ), and BaTiO 3 (5 μA/V 2 ), highlighting the superior shift current effects exhibited by low-dimensional materials. Since then, numerous 2D semiconductor materials with large shift current have been discovered, including α-In 2 Se 3 , CuInP 2 S 6 , 2H-MoS 2 , α-AsP, α-NP, h-BN, and β-GeS . Notably, CuInP 2 S 6 (CIPS) with a capacitor-like structure (Figure b) was the first directly experimentally studied 2D material.…”
Section: Shift Current Effectmentioning
confidence: 99%
“…Furthermore, the shift current in single-layer GeS (∼100 μA/V 2 ) exceeds that of conventional ferroelectric materials in the visible spectrum, such as BiFeO 3 (0.05 μA/V 2 ), and BaTiO 3 (5 μA/V 2 ), highlighting the superior shift current effects exhibited by low-dimensional materials. Since then, numerous 2D semiconductor materials with large shift current have been discovered, including α-In 2 Se 3 , CuInP 2 S 6 , 2H-MoS 2 , α-AsP, α-NP, h-BN, and β-GeS . Notably, CuInP 2 S 6 (CIPS) with a capacitor-like structure (Figure b) was the first directly experimentally studied 2D material.…”
Section: Shift Current Effectmentioning
confidence: 99%