“…Furthermore, the shift current in single-layer GeS (∼100 μA/V 2 ) exceeds that of conventional ferroelectric materials in the visible spectrum, such as BiFeO 3 (0.05 μA/V 2 ), and BaTiO 3 (5 μA/V 2 ), highlighting the superior shift current effects exhibited by low-dimensional materials. Since then, numerous 2D semiconductor materials with large shift current have been discovered, including α-In 2 Se 3 , CuInP 2 S 6 , 2H-MoS 2 , α-AsP, α-NP, h-BN, and β-GeS . Notably, CuInP 2 S 6 (CIPS) with a capacitor-like structure (Figure b) was the first directly experimentally studied 2D material.…”