The
optical and electronic properties of Bridgman grown single
crystals of the wide-bandgap semiconducting defect halide perovskites
A3M2I9 (A = Cs, Rb; M = Bi, Sb) have
been investigated. Intense Raman scattering was observed at room temperature
for each compound, indicating high polarizability and strong electron–phonon
coupling. Both low-temperature and room-temperature photoluminescence
(PL) were measured for each compound. Cs3Sb2I9 and Rb3Sb2I9 have
broad PL emission bands between 1.75 and 2.05 eV with peaks at 1.96
and 1.92 eV, respectively. The Cs3Bi2I9 PL spectra showed broad emission consisting of several overlapping
bands in the 1.65–2.2 eV range. Evidence of strong electron–phonon
coupling comparable to that of the alkali halides was observed in
phonon broadening of the PL emission. Effective phonon energies obtained
from temperature-dependent PL measurements were in agreement with
the Raman peak energies. A model is proposed whereby electron–phonon
interactions in Cs3Sb2I9, Rb3Sb2I9, and Cs3Bi2I9 induce small polarons, resulting in trapping of excitons
by the lattice. The recombination of these self-trapped excitons is
responsible for the broad PL emission. Rb3Bi2I9, Rb3Sb2I9, and Cs3Bi2I9 exhibit high resistivity and photoconductivity
response under laser photoexcitation, indicating that these compounds
possess potential as semiconductor hard radiation detector materials.