Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers

Crassous, Arnaud; Garcia, Vincent; Bouzéhouane, K.; Fusil, S.; Vlooswijk, A.H.G.; Rispens, Gijsbert; Noheda, Beatriz; Bibès, Manuel; Barthélémy, A.

doi:10.1063/1.3295700

Cited by 67 publications

(47 citation statements)

References 19 publications

(17 reference statements)

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“…16) or PbTiO 3 . 17 We assume also that the currents are mostly electron currents because in most oxide ferroelectrics with metal electrodes the barrier for electrons is lower than the barrier for holes. 18 It is noteworthy, that this applies for n-type as well as for p-type ferroelectric films.…”

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confidence: 99%

Electroresistance effects in ferroelectric tunnel barriers

2010

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Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction dependent ferroelectric barrier. The transport mechanisms, including direct tunneling, Fowler-Nordheim tunneling and thermionic injection, are considered in the calculation of the electroresistance as a function of ferroelectric barrier properties, given by the properties of the ferroelectric, the barrier thickness, and the metal properties, and in turn of the polarization direction. Large electroresistance is favored in thicker films for all three transport mechanisms but on the expense of current density. However, switching between two transport mechanisms, i.e., direct tunneling and Fowler-Nordheim tunneling, by polarization switching yields a large electroresistance. Furthermore, the most versatile playground in optimizing the device performance was found to be the electrode properties, especially screening length and band offset with the ferroelectric.

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confidence: 99%

Electroresistance effects in ferroelectric tunnel barriers

2010

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“…14 Up to now, most of the measurements performed on ferroelectric barriers with thicknesses small enough to allow direct quantum-mechanical tunneling have been performed by such a method. 5,6,10 In order to mitigate the spurious effects of the ambient environment and make the experimental results more reliable, capacitor-like heterostructures with top electrodes should be used instead of AFM tips as top electrodes. Resistive switching of such capacitors with relatively thick Pb(Zr,Ti)O 3 (PZT) barriers (ca.…”

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confidence: 99%

“…[3][4][5][6][7][8][9][10][11][12] However, there are mechanisms other than ferroelectric polarization switching, which might contribute to or generate a resistive switching effect, such as, for instance, surface electrochemical reactions. 4,13 Especially, experiments performed in ambient conditions by using a conductive atomic force microscope (AFM) tip in contact with a ferroelectric surface are prone to such effects.…”

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confidence: 99%

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

Pantel

Goetze

et al. 2012

Applied Physics Letters

103

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In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences the quantum-mechanical tunneling through the junction, resulting in tunnel electroresistance (TER). Here, we investigate tunnel electroresistance in Co/PbZr0.2Ti0.8O3/La0.7Sr0.3MnO3 tunnel junctions. The ferroelectric polarization in tunnel junctions with 1.2-1.6 nm (three to four unit cells) PbZr0.2Ti0.8O3 thickness and an area of 0.04 μm2 can be switched by about 1 V yielding a resistive ON/OFF-ratio of about 300 at 0.4 V. Combined piezoresponse force microscopy and electronic transport investigations of these junctions reveal that the transport mechanism is quantum tunneling and the resistive switching in these junctions is due only to ferroelectric switching.

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“…The PbTiO 3 (PT) is one of most studied ferroelectric materials in basic research and industrial applications [3][4][5][6][7][8][9][10][11]. In the literature there are many arguments about the nature of the phase transition of PbTiO 3 such as a displacement or order disorder transition.…”

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confidence: 99%

Effects of temperature and concentration of La in the form of A1 transverse optical phonon in the PbTiO3 system

2012

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The structural phase transition from ferroelectric to paraelectric was studied by Raman scattering in the ceramic lead titanate (PbTiO 3 ) doped with lanthanum (La). A1 vibrational mode contains some sub-peaks that have been associated in literature with PbTiO 3 concentration (Ca, Ba), and effects of high temperatures as it approaches the Curie temperature (Tc). Raman new study shows that the anomalous behavior of the A1 mode is not only caused by the effects of concentration or temperature near Tc, but by anharmonicity and defects in the network in the PbTiO 3 thermodynamically are inevitable. This effect was studied by a wide temperature range from 10 K to Tc in each sample (La = 0,5,10, 15, 20%), showing that the effect depends not only on the high temperatures in the pure PT. Keywords: PbTiO 3 , ferroelectric, paraelectric, anharmonicity. (La = 0,5,10, 15, 20%) Resumo A transição de fase estrutural de ferroelétrico para paraelétrico foi estudada por espalhamento Raman em cerâmicas de titanato de chumbo (PbTiO 3 ) dopadas com lantânio (La

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Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers

Cited by 67 publications

References 19 publications

Electroresistance effects in ferroelectric tunnel barriers

Electroresistance effects in ferroelectric tunnel barriers

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

Effects of temperature and concentration of La in the form of A1 transverse optical phonon in the PbTiO3 system

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