Giant tunneling electroresistance in epitaxial ferroelectric ultrathin films directly integrated on Si

Lee, Kyoungjun; Byun, Jiyun; Park, Kunwoo; Kang, Sungsu; Song, Myeong Seop; Lee, Jaekwang; Chae, Seung Chul

doi:10.1016/j.apmt.2021.101308

Cited by 13 publications

(10 citation statements)

References 37 publications

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“…However, when silicon serves as the semiconductor layer, an unintended oxide layer (e.g. SiO 2 ) can be generated at the silicon-ferroelectric interface [87]. This unintended additional layer, which has a narrow bandgap and low dielectric constant, introduces a high defect density and field drop, thereby decreasing reliability.…”

Section: Device Physicsmentioning

confidence: 99%

“…However, in 2011, Böscke et al discovered polar and non-centrosymmetric orthorhombic (ophase, space group: Pca2 1 ) phases in Si-doped HfO 2 , thereby confirming ferroelectricity in fluorite structures for the first time [43]. Subsequently, ferroelectric behavior verified in HfO 2 with doping such as Zr [138], Y [87], Gd [139], Sr [140], La [141], and Al [142], as well as in both undoped HfO 2 [143] and ZrO 2 [144]. The ferroelectricity in the orthorhombic phase of fluorite structure results from the displacement of four of the eight oxygen anions inside the unit cell.…”

Section: Fluorite-based Ftjsmentioning

confidence: 99%

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Ferroelectric tunnel junctions: promise, achievements and challenges

Park,

Lee,

Park

et al. 2024

J. Phys. D: Appl. Phys.

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Ferroelectric tunnel junctions (FTJs) have been the subject of ongoing research interest due to its fast operation based on the spontaneous polarization direction of ultrathin ferroelectrics and its simple two-terminal structure. Due to the advantages of FTJs, such as non-destructive readout, fast operation speed, low energy consumption, and high-density integration, they have recently been considered a promising candidate for non-volatile next-generation memory. These characteristics are essential to meet the increasing demand for high-performance memory in modern computing systems. In this review, we explore the basic principles and structures of FTJs and clarify the elements necessary for the successful fabrication and operation of FTJs. Then, we focus on the recent progress in perovskite oxide, fluorite, 2-dimensional van der Waals, and polymer-based FTJs and discuss ferroelectric materials expected to be available for FTJs use in the future. We highlight various functional device applications, including non-volatile memories, crossbar arrays, and synapses, utilizing the advantageous properties of ferroelectrics. Lastly, we address the challenges that FTJ devices currently face and propose a direction for moving forward.

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Section: Device Physicsmentioning

confidence: 99%

Section: Fluorite-based Ftjsmentioning

confidence: 99%

Ferroelectric tunnel junctions: promise, achievements and challenges

Park,

Lee,

Park

et al. 2024

J. Phys. D: Appl. Phys.

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“…In the earliest stages of FTJ research, epitaxial films grown by PLD or molecular beam epitaxy (MBE) were analyzed frequently using scanning probe microscopy (SPM). While wafer-scale PLD and MBE are widely-used deposition techniques for semiconductor devices [145,146], these methods are not likely compatible with CMOS technology due to their challenges such as the extremely higher thermal budget compared to the available temperature limit in CMOS technology [147,148]. However, for high-density storage devices, the discovery of a fluorite-structured ferroelectric that is compatible with ALD was considered a material breakthrough.…”

Section: Semiconductor Devices Based On Ultra-thin Filmsmentioning

confidence: 99%

A perspective on the physical scaling down of hafnia-based ferroelectrics

et al. 2023

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HfO2-based ferroelectric thin films have attracted significant interest for semiconductor device applications due to their compatibility with complementary metal oxide semiconductor (CMOS) technology. One of the benefits of HfO2 based ferroelectric thin films is their ability to be scaled to thicknesses as low as 10 nm while retaining their ferroelectric properties; a feat that has been difficult to accomplish with conventional perovskite-based ferroelectrics using CMOS-compatible processes. However, reducing the thickness limit of HfO2-based ferroelectric thin films below the sub-5-nm thickness regime while preserving their ferroelectric property remains a formidable challenge. This is because both the structural factors of HfO2, including polymorphism and orientation, and the electrical factors of HfO2-based devices, such as the depolarization field, are known to be highly dependent on the HfO2 thickness. Accordingly, when the thickness of HfO2 drops below 5 nm, these factors will become even more crucial. In this regard, the size effect of HfO2-based ferroelectric thin films is thoroughly discussed in the present review. The impact of thickness on the ferroelectric property of HfO2-based thin films and the electrical performance of HfO2-based ferroelectric semiconductor devices, such as ferroelectric random access memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction, is extensively discussed from the perspective of fundamental theory and experimental results. Finally, recent developments and reports on achieving ferroelectric HfO2 at sub-5 nm thickness regime and their applications are discussed.

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Section: 송명섭 채승철mentioning

confidence: 99%

“…d. TiN/Y:HfO 2 /SiO x / Si(001) 구조의 소자가 On(주황색) 및 Off(녹색) 상태일 때 계산된 전류-전압 그래프. Reprinted from, Applied Materials Today 26, Lee et al, Giant tunneling electroresistance in epitaxial ferroelectric ultrathin films directly integrated on Si, 101308,Copyright2023, with permission from Elsevier[66] .…”

mentioning

confidence: 99%

The Potential of ferroelectric HfO2 for Next-Generation Memory Device: Ferroelectric Properties and Applications

Song¹,

Chae²

2023

Ceramist

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The discovery of the ferroelectricity of HfO2 in 2011 has opened up new avenues for the application of ferroelectric technology. With the stability of ferroelectricity in a few nm scales, HfO2 has become a valuable material for the development of next-generation electronic memory devices. The unique structure of HfO2 gives rise to various ferroelectric properties and behaviors that can be utilized in different types of devices such as ferroelectric field effect transistors (FeFETs), negative capacitance field effect transistors (NCFETs), ferroelectric tunnel junctions (FTJs), and ferroelectric capacitors (FeCAPs). In this review, we explore the potential of HfO2 for the high-density storage of data and low-energy consumption in next-generation devices. We demonstrate the operating principles and strengths of HfO2 in various device applications, shedding light on how this material can help address the electronics industry's current challenges.

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Giant tunneling electroresistance in epitaxial ferroelectric ultrathin films directly integrated on Si

Cited by 13 publications

References 37 publications

Ferroelectric tunnel junctions: promise, achievements and challenges

Ferroelectric tunnel junctions: promise, achievements and challenges

A perspective on the physical scaling down of hafnia-based ferroelectrics

The Potential of ferroelectric HfO2 for Next-Generation Memory Device: Ferroelectric Properties and Applications

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