Giant valley splitting in a MoTe₂/MnSe₂ van der Waals heterostructure with room-temperature ferromagnetism

Abstract

An intrinsic large valley splitting has been realized in van der Waals (vdW) heterostructures formed by monolayer MoTe2 and layered room-temperature ferromagnetic MnSe2 via first-principles calculations. The value of valley...

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

“…Notably, achieving large valley splittings requires a type-III band alignment within these vdW heterostructures. First-principles calculations on TMD/NiY 2 heterostructures (where Y = Cl, Br, I) validate this correlation and foresee numerous heterostructures with substantial valley splittings as illustrated in Figure c and d. The study demonstrates a significant advancement in manipulating valley splitting within vdW heterostructures. These structures combine a monolayer of MoTe 2 with layered MnSe 2 MnSe 2 exhibiting ferromagnetism at room temperature.…”

“…(e) Variation of valley-splitting with interlayer distance, (f) effect of biaxial strain on valley-splitting, (g) changes in Curie temperatures with biaxial strain in monolayer MnSe 2 , and (h) band structure of MoTe 2 /MnSe 2 under 5% tensile strain. (e–h) Reproduced with permission from ref . Copyright 2022 Royal Science of Chemistry.…”

Large tunneling magnetoresistance in spin-filtering 1T-MnSe2/h-BN van der Waals magnetic tunnel junction

“…The optimized lattice constant of 1T-MnSe 2 is 3.66 Å, which agrees with the previous works. 24,58 The symmetrical response is a successful method to study a nonvolatile magnetization reversal induced by the electric fields. 24 Thus, we select intrinsic room temperature ferromagnetic half-metal 1T-MnSe 2 and nonmagnetic spacer h-BN to design the vdW 1T-MnSe 2 /h-BN/1T-MnSe 2 /h-BN/1T-MnSe 2 junction (Fig.…”

“…The optimized lattice constant of 1T-MnSe 2 is 3.66 Å, which agrees with the previous works. 24,58 The symmetrical response is a successful method to study a nonvolatile magnetization reversal induced by the electric fields. 24 Thus, we select intrinsic room temperature ferromagnetic half-metal 1T-MnSe For this proposed MTJ with a symmetrical structure and an antiparallel magnetic state, the degeneracy of the antiparallel magnetic configuration could be broken by an electric field, resulting in a 180°m agnetization reversal.…”

“…It is worth noting that the biaxial tensile strains could improve the Curie temperature of 1T-MnSe 2 , even reaching 443 K at 5% strain. 33,58 Additionally, when the biaxial tensile strain is less than 8%, the system still retains ferromagnetic half-metallicity. 33 Therefore, the designed device is theoretically appropriate for spintronic applications at room temperature.…”