Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots

d'Hollosy, Samuel; Jung, Minkyung; Baumgärtner, A.; Guzenko, Vitaliy A.; Madsen, Morten Hannibal; Nygård, Jesper; Schönenberger, Christian

doi:10.1021/acs.nanolett.5b01190

Cited by 27 publications

(35 citation statements)

References 31 publications

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“…With that, one is even able to design the transport topology of the current-carrying system. Axial doping can generate pn heterojunctions [13] or quantum dots [14,15]. In narrow-gap semiconductors such as InAs, InSb, or InN due to Fermi level pinning, the conduction band bends downwards at the surface of the nanowire and an electron accumulation layer is formed [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

et al. 2016

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We compute analytically the weak (anti)localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc-blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare wires of standard growth directions 100 , 111 , and 110 . The motion on the quasi-twodimensional surface is considered diffusive in both directions: transversal as well as along the cylinder axis. It is shown that Dresselhaus and Rashba SOC similarly affect the spin relaxation rates. For the 110 growth direction, the long-lived spin states are of helical nature. We detect a crossover from weak localization to weak antilocalization depending on spin-orbit coupling strength as well as dephasing and scattering rate. The theory is fitted to experimental data of an undoped 111 InAs nanowire device which exhibits a top-gate-controlled crossover from positive to negative magnetoconductivity. Thereby, we extract transport parameters where we quantify the distinct types of SOC individually.

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Section: Introductionmentioning

confidence: 99%

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

et al. 2016

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“…However, a definition with lithographic means is usually limited to gate lengths of

\geq 20

nm with interdistances of the same size. In fact, experimental demonstrations of multi‐gate transistors so far exhibited gates with lateral dimensions on the order of 50 nm and larger . Therefore, since for applications such as coupled quantum dots as briefly discussed in the preceding section the gates need to be on length scales as short as 5–10 nm, fabrication via lithography is not appropriate.…”

Section: Electrostatic Doping Of Field‐effect Transistorsmentioning

confidence: 99%

Alternatives for Doping in Nanoscale Field‐Effect Transistors

Riederer

Grap

Fischer

et al. 2018

Physica Status Solidi (a)

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In the present article, alternatives to impurity doping in nanoscale field‐effect transistors (FETs) are investigated. The discussion is based on conventional and tunnel FETs. The impact of dopant deactivation due to dielectric mismatch or quantization, random dopant effects, and the degeneracy level on the performance is discussed. As alternatives metal‐semiconductor‐contacts, gate‐controlled doping and an interface engineering approach are studied. One of the main requirements for proper device functionality is the existence of a band gap in the contacts. Thus, metal‐semiconductor contacts are less suited since they lead to ambipolar operation with increased leakage and to a deteriorated on‐state performance. With gate‐controlled doping, electrodes areused to create doped regions leaving behind a pristine band gap. Moreover, it enables reconfigurable devices with nFET, pFET and tunnel FET operation. Furthermore, with multiple nanoscale gates, electrostatic doping allows manipulating the potential within the device on the nanoscale. Experimental demonstrations of such devices with triple‐gates and multiple gate structures are presented. Finally, the interface engineering approach allows combining a metallic contact electrode with an almost unmodified band gap in the source/drain contacts by adjusting an ultrathin insulator in‐between metal and semiconductor yielding quasi‐doped contacts whose polarity depends on the work function of contact metal.

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“…One of the crucial ingredients that has made the investigation of single electron excitations in ballistic waveguides possible is the advent of devices that emit ordered streams of electrons with sufficient separation between individual particles [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Techniques to characterize quantum properties of electrical current have been adapted from photon quantum optics.…”

Section: Introductionmentioning

confidence: 99%

Time-energy filtering of single electrons in ballistic waveguides

2019

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Characterizing distinct electron wave packets is a basic task for solid-state electron quantum optics with applications in quantum metrology and sensing. A important circuit element for this task is a non-stationary potential barrier that enables backscattering of chiral particles depending on their energy and time of arrival. Here we solve the quantum mechanical problem of single-particle scattering by a ballistic constriction in an fully depleted quantum Hall system under spatially uniform but time-dependent electrostatic potential modulation. The result describes electrons distributed in time-energy space according to a modified Wigner quasiprobability distribution and scattered with an energy-dependent transmission probability that characterizes constriction in the absence of modulation. Modification of the incoming Wigner distribution due to external time-dependent potential simplifies in case of linear time-dependence and admits semiclassical interpretation. Our results support a recently proposed and implemented method for measuring time and energy distribution of solitary electrons as a quantum tomography technique, and offer new paths for experimental exploration of on-demand sources of coherent electrons. ModelWe consider a constriction with two counterpropagating quantum Hall edge channels. The coordinate x measures the distance along the edge, taking the center of the constriction as the origin, such that points to the left (right) of the constriction have negative (positive) x, see figure 2. The Hamiltonian for the two New J. Phys. 21 (2019) 093042 E Locane et al

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Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots

Cited by 27 publications

References 31 publications

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

Alternatives for Doping in Nanoscale Field‐Effect Transistors

Time-energy filtering of single electrons in ballistic waveguides

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