GISAXS study of cavities and {113} defects induced by neon and helium implantation in silicon

Abstract

Grazing incidence small-angle X-ray scattering experiments have been performed to study the morphology of nanocavities and {113} defects formed by implantation of 5 Â 10 16 cm À2 neon and helium ions in Si (001) at 50 keV. The results show that spherical cavities are formed in Si(001) implanted with Ne ions at 873 K and in Si(001) implanted with He ions at 473 K subsequently annealed at 873 K. In contrast, He-induced cavities at 873 K show {111} facets and wide size distribution due to an enhanced He mobility at high temperature. In addition to the faceted cavities, the clustering of interstitials leads to the formation of large extended planar {113} defects whose size has been estimated to be about 100 nm.

Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering

“…[356,357], He + and Ne + ions have been implanted into Si(001) at 873 K. The incident energy is 50 keV and the fluence is 5 × 10 16 cm −2 . Another sample was implanted with 5×10 16 cm −2 He + at 473 K and then annealed at 873 K. For Si(001) wafers implanted with Ne + ions at 873 K or implanted with He + ions at 473 K post-annealed at 873 K, an isotropic diffuse scattering signal is measured by GISAXS which can be assigned to spherical cavities.…”

Structural study of nanoporous ultra low-k dielectrics using complementary techniques: Ellipsometric porosimetry, X-ray reflectivity and grazing incidence small-angle X-ray scattering

“…This has been made through an Igor@ application using the formalism described in Refs. [13][14][15][16]. To be able to correct thoroughly the data, the optical coefficients a, b and the thickness obtained from ellipsometry and XRR measurements were introduced in the model, by assuming a molar mass twice the number of electrons, an approximation valid for light elements.…”

“…The GISAXS technique is in rapid expansion following the one of nanotechnologies. They tackle different fields in hard condensed matter such as superficial dots (metallic or quantum dots) [11,12], implanted defects such as He bubbles for silicium purification [13,14] or codeposited nitride-metal layers for their optical and magnetic properties [15,16]. The structural information's by GISAXS on ULK films is exploding, as witnessed by the numerous contributions on GISAXS in the last ''SAS2006'' conference proceedings [17].…”

X-ray metrology for advanced microelectronics

“…X-ray scattering-based techniques would appear to be useful metrology methods to characterize crystalline defects that are generated during ion implants [22][23][24]. In order to assess the capability of the GI-SAXS technique available on the ID02 beam line of the European Synchrotron Radiation Facility to detect crystalline defects, we prepared two silicon wafers.…”