Global Control of Front Propagation in Gate-Driven Multilayered Structures

We study front propagation in a globally coupled bistable semiconductor system. The analysis is based on an activator-inhibitor model derived for a gate-driven pnpn structure that is globally coupled via a gatecathode circuit, but the model is applicable for more general cases of a spatially extended system with Z-shaped bistability. We demonstrate that a global constraint allows for efficient control over the front propagation. In the voltage-driven regime the front propagates with a constant speed whose value and direction are controlled by the gate potential. Under general gate circuit conditions the front dynamics experiences either a positive or a negative feedback which acts with adjustable delay. This allows for tuning between accelerated, decelerated, and oscillating fronts.

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Global Control of Front Propagation in Gate-Driven Multilayered Structures

Cited by 9 publications

References 8 publications

Formation of Spatio-Temporal Structures in Semiconductors

Formation of Spatio-Temporal Structures in Semiconductors

Effects on global coupling of an interface problem in an activator–inhibitor system

Accelerated, decelerated, and oscillating fronts in a globally coupled bistable semiconductor system

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