Global Model of <formula formulatype="inline"><tex Notation="TeX">$\hbox{Cl}_{2}\hbox{/Ar}$</tex> </formula> High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP

Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution

“…In the same way, we have recently proposed an etching model of InP by Ar/Cl 2 plasma to predict the InP etch profile evolution versus the operating conditions 24. This model is now extended to our etching model that we present in this paper, by adding the nitrogen reaction scheme in order to study the effect of N 2 addition on the etch profile anisotropy.…”

“…Our etching model is based on the multi‐scale approach permitting the prediction of the InP etch profile evolution under Ar/Cl 2 /N 2 plasma mixture versus the operating conditions of ICP reactor. This is an extension of the InP etching model under Ar/Cl 2 plasma discharge 24. The advantage of this updated version is the proposition of chemical etching passivation mechanism by atomic nitrogen N. Details of our etching simulator have been given in ref 24.…”

“…This is an extension of the InP etching model under Ar/Cl 2 plasma discharge 24. The advantage of this updated version is the proposition of chemical etching passivation mechanism by atomic nitrogen N. Details of our etching simulator have been given in ref 24. It is composed of three modules: Plasma kinetic model Sheath model Etching model …”

“…This is due to the fact that the dissociation processes of N 2 by electronic impact to produce N are less efficient than those of Cl 2 to produce Cl. As example, the dissociation energy threshold by electronic impact of Cl 2 to product Cl is 3.4 eV24, 25 while that of N 2 to produce N is 9.76 eV (Table 2). Noting that the increase of the total neutral flux with pressure is slowed as the %N 2 increases.…”

“…Our InP etching model is based on the cellular Monte‐Carlo approach 24, 33. Details of the model have been presented in ref 24.…”