2014
DOI: 10.1109/tthz.2013.2281146
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Global Modeling of Active Terahertz Plasmonic Devices

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Cited by 27 publications
(8 citation statements)
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“…Consequently, not only plane waves are excited in confined structures, but also the evancesscent waves near the contacts 15,16 . From the first glance, the complexity of plasmonic response in confined 2DES makes full electromagnetic simulations 17,18 an only tool to predict their resonant properties.…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, not only plane waves are excited in confined structures, but also the evancesscent waves near the contacts 15,16 . From the first glance, the complexity of plasmonic response in confined 2DES makes full electromagnetic simulations 17,18 an only tool to predict their resonant properties.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, commercial numerical solvers have currently a limited ability to self-consistently solve problems involving complex electron dynamics (for example, effects of diffusion and dc currents). Analysis of such problems by purpose-built solvers has so far been limited to rather simple geometries [40].…”
Section: Theoretical Modelmentioning
confidence: 99%
“…Numerous structures of photoconductive antennas have been proposed, which were based on the incorporation of optical nano antennas [17], fractal geometries [18], gammadion-type structure [19], tapered helix monopole [20], hexagonal nano-antenna [21], interdigitated metallic dipole nanoantenna [22]- [24], 3D plasmon contact electrodes [25], nano-structured electrodes [26], thin-film plasma electrode [27], rectangular metal dipole nanoantenna [28], bow-tie metallic dipole nanoantenna [28], plasmon contact electrodes [29], [30], SRR-loaded antennas [31], and arrays of bowtie and four-leaf-clover-shaped antennas [32]. Further, several numerical models have been proposed for understanding the dynamics of these photoconductive antennas, such as full-wave numerical technique based on Maxwell and hydrodynamic transport equations [33], semiconductor carrier transport and migration models [22], [34], time-domain numerical modeling [35], numerical solution of induced current based on Monte Carlo simulation [36], finite element method [27], [37], and three-dimensional full-wave model [38].…”
Section: Introductionmentioning
confidence: 99%