Global modelling of heat transfer in crystal growth furnaces

Dupret, François; Nicodeme, P.; Ryckmans, Y.; Wouters, Pascale; Crochet, Marcel

doi:10.1016/0017-9310(90)90218-j

Cited by 237 publications

(129 citation statements)

References 25 publications

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“…The complexity of an adequate radiative transfer model varies greatly. If only opaque solid bodies with di®use surfaces are present in the growth system, computation of grey radiation using con¯guration (view) factors (a so-called "surface-to-surface" model) [12] is su±cient. Simulation of the growth of semi-transparent crystals is more di±cult.…”

Section: Radiative Heat Transfermentioning

confidence: 99%

Industrial challenges for numerical simulation of crystal growth

Богданов¹,

Ofengeim²,

Zhmakin³

2004

Open Physics

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Abstract:Numerical simulation of industrial crystal growth is di¯cult due to its multidisciplinary nature and the complex geometry of the real-life growth equipment. An attempt is made to itemize physical phenomena dominant in the di¬erent methods for growth of bulk crystals from the melt and the vapor phase as well as to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of a computational engine and a graphic user interface of the industry-oriented codes is discussed. A simulator for the entire growth process of bulk crystals by sublimation method is described.

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Section: Radiative Heat Transfermentioning

confidence: 99%

Industrial challenges for numerical simulation of crystal growth

Богданов¹,

Ofengeim²,

Zhmakin³

2004

Open Physics

View full text Add to dashboard Cite

show abstract

“…The complexity of the adequate radiative transfer model varies greatly. If only opaque solid bodies with diffuse surfaces are present in the growth system, computation of grey radiation using configuration (view) factors ("surface-to-surface") [8] is required. Simulation of growth of semi-transparent crystals is more difficult.…”

Section: Mathematical Modelsmentioning

confidence: 99%

Industrial Challenges for Numerical Simulation of Crystal Growth

Ofengeim¹,

Zhmakin

2003

Lecture Notes in Computer Science

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Abstract. Numerical simulation of industrial crystal growth is difficult due to its multidisciplinary nature and complex geometry of real-life growth equipment. An attempt is made to itemize physical phenomena dominant in different methods for growth of bulk crystals from melt and from vapour phase and to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of computational engine and graphic user interface of industryoriented codes is discussesd. In conclusion, a simulator for the entire growth process of bulk crystals by sublimation method is described.

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“…These semiconducting crystals are mostly used as substrates in electronic industry. However, during the crystal growth process, thermal stresses will be present if heat transfer is not well controlled [1].…”

Section: Introductionmentioning

confidence: 99%

Prediction of Better Flow Control Parameters in MHD Flows Using a High Accuracy Finite Difference Scheme

Rejeesh¹,

Udhayakumar²,

Sekhar³

et al. 2017

AJCM

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We have successfully attempted to solve the equations of full-MHD model within the framework of ψ ω − formulation with an objective to evaluate the performance of a new higher order scheme to predict better values of control parameters of the flow. In particular for MHD flows, magnetic field and electrical conductivity are the control parameters. In this work, the results from our efficient high order accurate scheme are compared with the results of second order method and significant discrepancies are noted in separation length, drag coefficient and mean Nusselt number. The governing Navier-Stokes equation is fully nonlinear due to its coupling with Maxwell's equations. The momentum equation has several highly nonlinear body-force terms due to full-MHD model in cylindrical polar system. Our high accuracy results predict that a relatively lower magnetic field is sufficient to achieve full suppression of boundary layer and this is a favorable result for practical applications. The present computational scheme predicts that a drag-coefficient minimum can be achieved when , it is found that the heat transfer rate is independent of electrical conductivity of the fluid. From the numerical values of physical quantities, we establish that the order of accuracy of the computed numerical results is fourth order accurate by using the method of divided differences.

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Global modelling of heat transfer in crystal growth furnaces

Cited by 237 publications

References 25 publications

Industrial challenges for numerical simulation of crystal growth

Industrial challenges for numerical simulation of crystal growth

Industrial Challenges for Numerical Simulation of Crystal Growth

Prediction of Better Flow Control Parameters in MHD Flows Using a High Accuracy Finite Difference Scheme

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