Global phase diagram of disordered higher-order Weyl semimetals

Zhang, Zhiqiang; Wu, Bing-Lan; Chen, Chui-Zhen; Jiang, Hua

doi:10.1103/physrevb.104.014203

Cited by 24 publications

(7 citation statements)

References 50 publications

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“…In the context of HOTPs, it has been found that these phases are stable against weak disorder [34,68,95,134,135,[138][139][140][141][142][143][144][145][146][147]. Interestingly, the concept of TAIs is also extended to HOTIs with chiral symmetry [134,135] and higher-order topological superconductors [95], showing that disorder can induce a higher-order topological phase transition from a trivial one to a nontrivial one.…”

Section: Effects Of Quenched Disorder On Higher-order Topological Phasesmentioning

confidence: 99%

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Higher-order topological phases in crystalline and non-crystalline systems: a review

Yang,

Wang,

et al. 2024

J. Phys.: Condens. Matter

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In recent years, higher-order topological phases have attracted great interest in various fields of physics. These phases have protected boundary states at lower-dimensional boundaries than the conventional first-order topological phases due to the higher-order bulk-boundary correspondence. In this review, we summarize current research progress on higher-order topological phases in both crystalline and non-crystalline systems. We firstly introduce prototypical models of higher-order topological phases in crystals and their topological characterizations. We then discuss effects of quenched disorder on higher-order topology and demonstrate disorder-induced higher-order topological insulators. We also review the theoretical studies on higher-order topological insulators in amorphous systems without any crystalline symmetry and higher-order topological phases in non-periodic lattices including quasicrystals, hyperbolic lattices, and fractals, which have no crystalline counterparts. We conclude the review by a summary of experimental realizations of higher-order topological phases and discussions on potential directions for future study.

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Section: Effects Of Quenched Disorder On Higher-order Topological Phasesmentioning

confidence: 99%

“…People have also studied the effects of quenched disorder on the higher-order topology, and found that the higher-order topological states remain robust against weak disorder [34,68,95,134,135,[138][139][140][141][142][143][144][145][146][147]. More remarkably, the disorder is not always detrimental to topological phases.…”

Section: Introductionmentioning

confidence: 99%

Higher-order topological phases in crystalline and non-crystalline systems: a review

Yang,

Wang,

et al. 2024

J. Phys.: Condens. Matter

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“…Subsequently, 3D HO topological Dirac [26,27], Weyl [28,29], and nodal-Line [30] semimetals were raised consecutively, which own 1D Fermi arc hinge states. Moreover, HO topological phase can also be transited from the first-order topological phase in semimetals by an magnetic field (MF) [31,32], the periodic driving [33], and disorder [34]. When a perpendicular MF along the y-axis direction is applied to the first-order TDSM Cd 3 As 2 , Landau bands of the Fermi arc surface states and band gap are induced by the orbital and Zeeman effects of the MF, respectively, leading to the hinge states on both sides of the top and bottom surfaces [32].…”

Section: Introductionmentioning

confidence: 99%

Electronic structures and Aharonov–Bohm effect in higher-order topological Dirac Semimetal nanoribbons with strong confinements

Tang

Han

et al. 2023

New J. Phys.

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Electronic structures and magentotransport properties of topological Dirac semimetal (TDSM) nanoribbons are studied by adopting the tight-binding lattice model and the Landauer-Buttiker formula based on the non-equilibrium Green's function. For concreteness, the TDSM material Cd3As2 grown along the experimentally accessible [110] crystallographic direction is taken as an example. We found that the electronic structures of the TDSM nanoribbon depend on both the strength and direction of the magnetic eld (MF). The transversal local charge density (LCD) distribution of the electronic states in the TDSM nanoribbon is moved gradually from the center toward the hinge of each surface as a [010] direction MF strength is increased, forming the two-sided hinge states. However, one-sided surface states are generated in the TDSM nanoribbon when a [001] direction MF is applied. As a result, one-sided hinge statescan be achieved once a tilted MF is placed to the TDSM nanoribbon. The underlying physical mechanism of the desired one-sided hinge states is attributed to both the orbital and Zeeman eects of the MF, which is given by analytical analyses. In addition,typical Aharonov-Bohm interference patterns are observed in the charge conductance of the two-terminal TDSM nanoribbon with a tilted MF. This conductance behaviour originates from the unique interfering loop shaped by the one-sided hinge states. Thesendings may not only further our understanding on the external-eld-induced higher-order (HO) topological phases but also provide an alternative method to probe the HO boundary states.

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“…Recently, higher-order topological materials attracted a lot of interest [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. For d dimensional TI, the system has d − 1 gapless Dirac edge states.…”

Section: Introductionmentioning

confidence: 99%

Fate of higher-order topological insulator under Coulomb interaction

Wang¹,

Zhang²

2022

Preprint

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In this article, we study the influence of long-range Coulomb interaction on three-dimensional second-order topological insulator (TI) by renormalization group theory. We find that both the analysis method and conclusion in the recent Letter Phys. Rev. Lett. 127, 176001 (2021) are unreliable. There are two problems in this Letter. Firstly, the characteristic described by the RG flows m → ∞ and D → 0 can not be used as the criterion for transition from second-order TI to TI, since this characteristic could be essentially not induced by Coulomb interaction but only results from the trivial power counting contribution of fermion action. Indeed, this characteristic is satisfied even for free second-order TI. Second, the flow of B is not paid attention, which is very important and should be seriously studied. In this article, we analyze carefully the corrections for the flows of the model parameters induced by Coulomb interaction. We find that the sign of m changes but the sign of B holds if the initial Coulomb strength is large enough, while the sign of m holds but the sign of B changes if the initial Coulomb strength takes small values. These results indicate that the second-order TI is unstable to trivial band insulator not only under strong Coulomb interaction but also under weak Coulomb interaction.

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Global phase diagram of disordered higher-order Weyl semimetals

Cited by 24 publications

References 50 publications

Higher-order topological phases in crystalline and non-crystalline systems: a review

Higher-order topological phases in crystalline and non-crystalline systems: a review

Electronic structures and Aharonov–Bohm effect in higher-order topological Dirac Semimetal nanoribbons with strong confinements

Fate of higher-order topological insulator under Coulomb interaction

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