Glow discharge optical emission spectroscopy for accurate and well resolved analysis of coatings and thin films

Wilke, Marcus; Teichert, Gerd; Gemma, Ryota; Pundt, Astrid; Kirchheim, R.; Romanus, H.; Schaaf, Peter

doi:10.1016/j.tsf.2011.07.058

Cited by 54 publications

(47 citation statements)

References 44 publications

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“…The main impurities in the film, that is, H, C, and N, were also detected and the emission profiles and integrated intensities are presented in Figure a and b, respectively. Similarly to the Si and O emission profiles, also the H, C, and N profiles are reported only for the film deposited at 180 W. Although the higher emission intensity for C and H at the beginning of the sputtering is a known surface effect, their qualitative evaluation allows for an analytical comparison between the different samples (Figure b).…”

Section: Resultsmentioning

confidence: 99%

Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO₂ Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Zhu

Modanese

Sippola

et al. 2017

Physica Status Solidi (a)

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In this contribution, pulsed radio frequency (rf ) glow discharge optical emission spectroscopy (GDOES) is used to investigate the film properties of SiO 2 deposited by plasma enhanced atomic layer deposition (PEALD), for example, the chemical composition, structural properties and film thickness. The total sputtering time until the interface between the SiO 2 layer and the Si substrate is %13 s. The main impurities in the film, that is, H, C, and N, are detected. It is observed that both C and N intensities decrease with increasing plasma power during deposition of the thin film. The higher plasma power seems to increase the reactivity of the PEALD process and consequently, it might reduce the concentration of impurities in the deposited film. Moreover, the deviation of the GDOES sputtering rates on the film are related to the film density. The thickness of one-hundred-nanometer range SiO 2 film is calculated from the GDOES silicon and oxygen emission profiles, and its difference from ellipsometry and X-ray reflectivity measurements highlights the challenges for the GDOES technique for transparent thin films. Experimental SectionPEALD SiO 2 films deposited on 7 Ω cm, P-doped, (100)-oriented Czochralski silicon polished substrates from bis(tertiary-butylamino)silane (BTBAS) and O 2 plasma with different powers (50, 180, and 300 W) were analyzed in this study. All depositions were done with a Beneq TFS 200 ALD-reactor using a capacitively coupled plasma source at 90 C.

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Section: Resultsmentioning

confidence: 99%

Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO₂ Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Zhu

Modanese

Sippola

et al. 2017

Physica Status Solidi (a)

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“…The morphology of the material was studied using a Quanta Inspect F scanning electron microscope (SEM). The top surface analysis of the samples was studied by Glow Discharge Optical Emission Spectroscopy (GDOES) [21,22] using a GD Profiler 2 from Horiba/Jobin-Yvon. The technique is suitable for thin film analysis and permits determining the chemical gradient composition from the surface to the bulk and, if the ablation rate can be estimated, to determine the thickness of different layers of the nanocomposite materials [23,24].…”

Section: Characterization Methodsmentioning

confidence: 99%

Inhibitory Effect Evaluation of Glycerol‐Iron Oxide Thin Films on Methicillin‐Resistant Staphylococcus aureus

Popa

Продан

Chapon

et al. 2015

Journal of Nanomaterials

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The main purpose of this study was to evaluate the inhibitory effect of glycerol- iron oxide thin films onMethicillin-Resistant Staphylococcus aureus(MRSA). Our results suggest that glycerol-iron oxide thin films could be used in the future for various biomedical and pharmaceutical applications. The glycerol-iron oxide thin films have been deposited by spin coating method on a silicon (111) substrate. The structural properties have been studied by X-ray diffraction (XRD) and scanning electron spectroscopy (SEM). The XRD investigations of the prepared thin films demonstrate that the crystal structure of glycerol-iron oxide nanoparticles was not changed after spin coating deposition. On the other hand, the SEM micrographs suggest that the size of the glycerol-iron oxide microspheres increased with the increase of glycerol exhibiting narrow size distributions. The qualitative depth profile of glycerol-iron oxide thin films was identified by glow discharge optical emission spectroscopy (GDOES). The GDOES spectra revealed the presence of the main elements: Fe, O, C, H, and Si. The antimicrobial activity of glycerol-iron oxide thin films was evaluated by measuring the zone of inhibition. After 18 hours of incubation at 37°C, the diameters of the zones of complete inhibition have been measured obtaining values around 25 mm.

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“…[12] The depth profiles were measured in RF excitation mode (constant voltage-constant pres- The micro-and nanostructure of the films were analyzed by grazing incidence X-ray diffraction (GIXRD) at an incidence angle u of 38 in the 2u range of 3-808 on a Bruker AXS D5000 and high resolution transmission electron microscopy (HRTEM) on a FEI TECNAI 20S-TWIN (FEI, Netherlands), equipped with an energy dispersive spectroscopy (EDS) system. The 50 nm thick TEM cross-section lamellas were prepared by focused ion beam technique.…”

Section: Methodsmentioning

confidence: 99%

Thin Film Synthesis of Ti₃SiC₂ by Rapid Thermal Processing of Magnetron‐Sputtered TiCSi Multilayer Systems

et al. 2012

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The ternary compound Ti 3 SiC 2 has a nanolaminated structure and belongs to the class of M nþ1 AX n phases. MAX phases have a high potential to be used as high temperature contacts on different substrates. They combine metallic and ceramic properties, like relative high electrical conductivity and high oxidation resistance, due to their nanolaminated structure. In the last 20 years there were several attempts to reduce the formation temperature of MAX phases by different sputtering techniques. Eklund et al. [1] mentioned that thin film processing and the growth of 3-1-2 MAX phases such as Ti 3 SiC 2 , Ti 3 GeC 2 and Ti 3 AlC 2 require high synthesis temperatures in the range of 800-1000 8C due to the diffusion length in large unit cells. In fact, Ti 3 SiC 2 thin films were synthesized by magnetron sputtering techniques from elemental targets (titanium, silicon, carbon, or evaporated C 60 ), but at relative high deposition temperatures in the range from 750 to 900 8C. [2][3][4][5][6][7] Furthermore, Ti 3 SiC 2 films deposited by magnetron sputtering by using a stoichiometric target showed good results concerning the phase formation in a temperature range of 850-900 8C. [5,8] These deposition temperatures are, however, relatively high and the exposure time for the substrate is about 1-5 h, depending on the deposition conditions and the used targets. [2][3][4][5][6][7] Other attempts of depositing thin films of MAX phases include the pulsed laser deposition from Cr 2 AlC-and Ti 3 SiC 2 -compound targets as shown by Lange et al. and Schaaf et al. [9][10][11] Due to the ability of this deposition technique to form particle species with higher energies and even to transfer complex target stoichiometries compared to the magnetron sputtering method, the pulsed laser deposition can decrease the formation temperature and a low temperature exposure to the substrate.In this work, the rapid synthesis of Ti 3 SiC 2 with a low temperature input to the substrate is studied by a multilayer system, which was sputter deposited onto two different substrates utilizing the elemental targets titanium, carbon and silicon.

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Glow discharge optical emission spectroscopy for accurate and well resolved analysis of coatings and thin films

Cited by 54 publications

References 44 publications

Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO₂ Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO₂ Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Inhibitory Effect Evaluation of Glycerol‐Iron Oxide Thin Films on Methicillin‐Resistant Staphylococcus aureus

Thin Film Synthesis of Ti₃SiC₂ by Rapid Thermal Processing of Magnetron‐Sputtered TiCSi Multilayer Systems

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Glow discharge optical emission spectroscopy for accurate and well resolved analysis of coatings and thin films

Cited by 54 publications

References 44 publications

Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO2 Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO2 Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Inhibitory Effect Evaluation of Glycerol‐Iron Oxide Thin Films on Methicillin‐Resistant Staphylococcus aureus

Thin Film Synthesis of Ti3SiC2 by Rapid Thermal Processing of Magnetron‐Sputtered TiCSi Multilayer Systems

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Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO₂ Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO₂ Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

Thin Film Synthesis of Ti₃SiC₂ by Rapid Thermal Processing of Magnetron‐Sputtered TiCSi Multilayer Systems