Gold-Aluminum Intermetallics: Ball Bond Shear Testing and Thin Film Reaction Couples

Clatterbaugh, G. V.; Weiner, J.A.; Charles, Harry K.

doi:10.1109/tchmt.1984.1136367

Cited by 56 publications

(13 citation statements)

References 5 publications

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“…10(b) corresponds to a lower shear strength. These failure modes have been widely reported previously in thermosonic bonding of gold wires to aluminum pads [13]. Silicon cratering is known to be related to excessive local stress at a bonding site generated by the bonding force and the applied ultrasonic energy.…”

Section: Shear Testssupporting

confidence: 57%

Laser-assisted bumping for flip chip assembly

Wang

Holmes

2001

IEEE Trans. Electron. Packag. Manufact.

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Section: Shear Testssupporting

confidence: 57%

Laser-assisted bumping for flip chip assembly

Wang

Holmes

2001

IEEE Trans. Electron. Packag. Manufact.

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“…Au-rich IMCs were the main IMC phases at most of bonding areas due to the large amount of Au relative to Al. [5][6][7][8][9] In addition, the difference of diffusion rate between Au and Al and volume shrinkage by Au-Al IMC formation cause void formation. Due to the increase of ball bonding area per volume, Au-Al bond reliability becomes more susceptible to the formation of Au-Al IMCs and voids, which causes the increase of electrical resistance, crack formation, and, finally, bond failure.…”

Section: Introductionmentioning

confidence: 99%

Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability

Gam

Kim

Cho³

et al. 2006

Journal of Elec Materi

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Finer pitch wire bonding technology has been needed since chips have more and finer pitch I/Os. However, finer Au wires are more prone to Au-Al bond reliability and wire sweeping problems when molded with epoxy molding compound. One of the solutions for solving these problems is to add special alloying elements to Au bonding wires. In this study, Cu and Pd were added to Au bonding wire as alloying elements. These alloyed Au bonding wires-Au-1 wt.% Cu wire and Au-1 wt.% Pd wire-were bonded on Al pads and then subsequently aged at 175°C and 200°C. Cu and Pd additions to Au bonding wire slowed down interfacial reactions and crack formation due to the formation of a Cu-rich layer and a Pd-rich layer at the interface. Wire pull testing (WPT) after thermal aging showed that Cu and Pd addition enhanced bond reliability, and Cu was more effective for improving bond reliability than Pd. In addition, comparison between the results of observation of interfacial reactions and WPT proved that crack formation was an important factor to evaluate bond reliability.

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“…The formation of optimum levels of intermetallic phases in AuAl ball bonds is considered to improve the bond strength. [9,10] Dittmer et al's [11] results that the bond shear strength increases with intermetallic phase growth support the preceding argument. Rooney et al [12] also indicated that the intermetallic phase formation provides a strong mechanical and electrical interconnection and the greater the intermetallic phase formation, the stronger the Au-Al ball bond.…”

Section: Introductionmentioning

confidence: 67%

Partial diffusion reactions and the associated volume changes in thermally exposed Au-Al ball bonds

Noolu

Murdeshwar

Ely

et al. 2004

Metall Mater Trans A

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Thermal exposure of Au-Al ball bonds results in the transformation of Au-Al phases across and lateral to the ball bond that affects their service life. The phase transformations across and lateral to the AuAl ball bond were described by partial reactions at each of the interphase boundaries. Based on a model for the mass distribution of Au from the Au phase or the Au-rich phases towards the Al phase or the Al-rich phases, volume changes associated with the partial reactions were calculated. Except for the Au 4 Al and AuAl 2 phases, theoretical analysis showed that the growth of all the Au-Al phases across the ball bond results in volumetric shrinkage. The growth of the Au-Al phases across the bond is restricted due to the limited bonded Al metallization available to take part in the interdiffusion reactions. The supply limitation of the bonded metallization gives rise to reverse transformations that result in the formation of the Au 4 Al phase across the entire reaction zone across the ball bond. Except for the AuAl 2 phase, theoretical analysis showed that the reverse transformation of all the Au-Al phases across the ball bond is associated with minimal volume change. A "Criterion for Inward Lateral Growth" that governs the growth of Au-Al phases laterally into the ball bond was developed. Theoretical analysis showed that except for AuAl 2 , the lateral growth of all the Au-Al phases results in volumetric shrinkage. The lateral phase transformations are essentially reverse transformations due to no-supply of Au. Theoretical analysis showed that all the lateral reverse transformations also result in volumetric shrinkage.

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Gold-Aluminum Intermetallics: Ball Bond Shear Testing and Thin Film Reaction Couples

Cited by 56 publications

References 5 publications

Laser-assisted bumping for flip chip assembly

Laser-assisted bumping for flip chip assembly

Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability

Partial diffusion reactions and the associated volume changes in thermally exposed Au-Al ball bonds

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