2006
DOI: 10.1021/jp062854x
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Gold-Catalyzed Low-Temperature Growth of Cadmium Oxide Nanowires by Vapor Transport

Abstract: Ultralong cadmium oxide nanowires were synthesized in high yield on gold-coated silicon substrates by using a vapor transport process. Cadmium vapor generated by the carbothermal reduction of CdO powder in a tube furnace heated to 500 degrees C was carried to the substrate zone by an argon flow with a trace amount of oxygen. The CdO nanowires grew via a vapor-liquid-solid growth mechanism. The diameters of the nanowires are approximately 40-80 nm, and can reach lengths of 30-50 mum. Because the nanowire format… Show more

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Cited by 114 publications
(58 citation statements)
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“…Numerous methods have been reported for the preparation of pure and doped CdO nanoparticles such as sol-gel [3], solvothermal [4], co-precipitation [5], and microemulsion [6]. Synthesising techniques with different interesting morphologies including nanowires [7], nanofibres [8], nanoparticles [9], nanoclusters [10], nanorods [11], nanobelts [12], nanocubes [13] are also reported as obtained. Certain techniques require sophisticated equipments, time consumptions and energy dissipation.…”
Section: Introductionmentioning
confidence: 99%
“…Numerous methods have been reported for the preparation of pure and doped CdO nanoparticles such as sol-gel [3], solvothermal [4], co-precipitation [5], and microemulsion [6]. Synthesising techniques with different interesting morphologies including nanowires [7], nanofibres [8], nanoparticles [9], nanoclusters [10], nanorods [11], nanobelts [12], nanocubes [13] are also reported as obtained. Certain techniques require sophisticated equipments, time consumptions and energy dissipation.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, interests in the study of Transparent Conductive Oxide (TCO) nanomaterials have gained special attention due to their important applications in the current technology. Among the transparent conducting metal oxide semiconductor materials, CdO is an important n-type semiconductor material with direct band gap of 2.2-2.7 eV and indirect band gap of 1.36-1.98 eV [1]. CdO finds its potential applications in the field optoelectronics devices such as solar cells, phototransistors, photodiodes, transparent electrodes, catalysts and gas sensors [2][3][4][5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…Cadmium oxide, CdO, is a known n-type semiconductor with a direct band gap of 2.2 to 2.5 eV and an indirect band gap of 1.36 to 1.98 eV [1][2][3][4]. Some reports have presented that the band gap of this material can change in the range of 1.1 to 3.3 eV [5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%