Gold solubility in silicon and gettering by phosphorus

Baldi, L.; Cerofolini, G. F.; Ferla, G.; Frigerio, G.

doi:10.1002/pssa.2210480232

Cited by 58 publications

(17 citation statements)

References 13 publications

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“…In segregate-induced gettering, the solid solubility of metallic impurities in the gettering sinks increases substantially more than in silicon crystal bulk without gettering sinks [51]. Figure 6 indicates that the metallic impurity concentration in the hydrocarbon–molecular–ion projection range is higher than that in the solid solubility solution of silicon crystal bulk.…”

Section: Resultsmentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

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Section: Resultsmentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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“…For the first possibility, a previous study showed that a high‐energy ion implantation technique formed ion‐ implantation‐related induced defects in the implantation projection range . These defects induced strain stress in the silicon matrix interface.…”

Section: Resultsmentioning

confidence: 99%

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

Kurita

Kadono

Okuyama

et al. 2017

Physica Status Solidi (a)

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A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen elements are localized in the projection range of the silicon wafer by implantation of ion clusters from a hydrocarbon molecular gas source. Furthermore, these wafers can getter oxygen impurities out‐diffused to device active regions from a Czochralski grown silicon wafer substrate to the carbon cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen‐related defects in the device active regions and improve electrical performance characteristics, such as the dark current, white spot defects, pn‐junction leakage current, and image lag characteristics. The new technique enables the formation of high‐gettering‐capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly improve electrical devices performance characteristics in advanced CMOS image sensors.

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“…Metal impurities elimination efficiency of P gettering depends on the transport of impurities and solubility segregation. It was reported that there is competing effectiveness of two processes responsible for segregation gettering, that is, impurity transport and solubility segregation, the latter process being characterized by a decreasing segregation coefficient with increasing temperature [8,11]. At high temperature, metal solubility is large, so required time for precipitation at the gettered region becomes long.…”

Section: Resultsmentioning

confidence: 99%

Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

Park

Tark

Kim

et al. 2012

International Journal of Photoenergy

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To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

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Gold solubility in silicon and gettering by phosphorus

Cited by 58 publications

References 13 publications

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

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