Gold substrate-induced single-mode lasing of GaN nanowires

Xu, Huiwen; Wright, Jeremy Benjamin; Hurtado, Antonio; Luk, Ting S.; Figiel, Jeffrey J.; Cross, Karen Charlene; Balakrishnan, Ganesh; Lester, L. F.; Brener, Igal; Wang, George T.

doi:10.1063/1.4768300

Cited by 32 publications

(29 citation statements)

References 20 publications

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“…The lasing threshold increase is due to the increase of ambient refractive index, which results in increase of mirror loss and decrease of confinement factor. We note that the measured lasing threshold of the nanotubes is significantly higher than reported for c-axis GaN nanowires fabricated by this two-step top-down approach 6,11 . In order to understand the threshold increase, an eigenmode solver (Lumerical Inc.) was used to simulate the confinement factor and the propagation loss of the transverse modes.…”

Section: Table Of Contents Figurecontrasting

confidence: 55%

“…In order to maximize the potential of nanowire lasers, a greater understanding and control over their properties, including mode control, polarization control, wavelength tuning, and beam shaping, is necessary. Recently, single mode emission from GaN nanowire lasers was demonstrated via several routes, including size (diameter and length) control 6 , coupled nanowires [7][8][9] , distributed feedback 10 , and placement onto a metal substrate, which induces a mode-selective loss 11 . Wavelength tuning of GaN nanowire lasers was demonstrated using GaN/InGaN nanowire photonic crystal arrays 12,13 , hydrostatic pressure 14 , and bandgap graded nanowires 15,16 .…”

Section: Table Of Contents Figurementioning

confidence: 99%

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Annular-Shaped Emission from Gallium Nitride Nanotube Lasers

Liu

Hurtado

et al. 2015

ACS Photonics

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Section: Table Of Contents Figurecontrasting

confidence: 55%

Section: Table Of Contents Figurementioning

confidence: 99%

Annular-Shaped Emission from Gallium Nitride Nanotube Lasers

Liu

Hurtado

et al. 2015

ACS Photonics

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“…Xu et al, meanwhile, presented results of gold substrate-induced single-mode lasing in GaN nanowires [111]. They showed single-mode lasing and demonstrated that, via the losses due to the gold film, one can discriminate lasing modes such that only one mode will be preferably excited.…”

Section: (B) Hybrid Systems and Heterostructuresmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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“…Wright et al [14] achieved single-mode lasing using distributed feedback by coupling GaN nanowire lasers to an external dielectric grating. Moreover, single-mode lasing was recently demonstrated from single GaN nanowire lasers when coupled to a lossy metal substrate due to the suppression of the emission from higher order transverse modes [15]. However, the polarization, another key feature essential for many practical applications, apart from a couple of recent studies [16,17] has rarely been studied in nanowire lasers.…”

Section: Introductionmentioning

confidence: 99%

Polarization control in GaN nanowire lasers

Xu¹,

Hurtado²,

Wright³

et al. 2014

Opt. Express

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Abstract:We demonstrate polarization control in optically-pumped single GaN nanowire lasers fabricated by a top-down method. By placing the GaN nanowires onto gold substrates, the naturally occurring randomly orientated elliptical polarization of nanowire lasers is converted to a linear polarization that is oriented parallel to the substrate surface. Confirmed by simulation results, this polarization control is attributed to a polarization-dependent loss induced by the gold substrate, which breaks the mode degeneracy of the nanowire and forms two orthogonally polarized modes with largely different cavity losses.

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Gold substrate-induced single-mode lasing of GaN nanowires

Cited by 32 publications

References 20 publications

Annular-Shaped Emission from Gallium Nitride Nanotube Lasers

Annular-Shaped Emission from Gallium Nitride Nanotube Lasers

Nanowire Lasers

Polarization control in GaN nanowire lasers

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