Bottom-up deposition of gold in fine trenches, also called "superfill," was recently demonstrated using a submonolayer coverage of preadsorbed, deposition-rate-accelerating lead followed by gold electrodeposition. The present study has used experiments on planar substrates to quantify the effect of Pb adsorption on the Au deposition rate and the rate at which the adsorbed Pb was consumed during the Au deposition process. The values obtained have been incorporated into the curvature enhanced accelerator coverage mechanism of superfill where they were used to quantitatively predict the nonconformal, bottom-up deposition observed during filling of the patterned features. The results indicate the potential of the process for damascene interconnect fabrication in GaAs, GaN, and related technologies.The bottom-up "superfill" process for fabrication of copper interconnects 1 is now the standard for state-of-the-art interconnect fabrication within the silicon-based semiconductor industry. However, gold is used to form a variety of ohmic and Schottky contacts for semiconductor technologies based on, for example, gallium arsenide 2 and gallium nitride 3 as well as for chip-level wire bonding; hence, an interest exists in a process for fabricating gold interconnects. A bottom-up, "superfill" process for Au that would be appropriate for fabricating interconnects in damascene processing was recently demonstrated for Au superfill in fine trenches, 4 as was an alternative process. 5 The present paper uses measurement techniques and models first developed to understand the related copper superfill process in order to elucidate the relevant kinetics of the new Au superfill process. The kinetics obtained are then used to quantitatively predict the Au superfill process.While several mechanisms have been proposed to underlie the superfill process during electrochemical deposition ͑ECD͒ of copper, 6-9 the curvature-enhanced accelerator coverage ͑CEAC͒ mechanism 8,9 has been demonstrated to quantitatively predict superfill during electrodeposition of copper 8-12 and silver 13-16 and chemical vapor deposition of copper. 17 The CEAC mechanism predicts that an electrolyte-additive system can yield superfill when two requirements are met: ͑i͒ the additive adsorbs on the deposit surface and accelerates the local deposition rate and ͑ii͒ the adsorbed additive remains on the surface of the deposit during deposition. Under these circumstances, the CEAC predicts that the decreasing area of the metal surface at the bottoms of filling features will lead to locally increasing coverage of the adsorbed accelerator, which will lead to increased local deposition rate and bottom-up superfill. Predictive models based on the CEAC mechanism use kinetics obtained from studies on planar substrates; no additional parameters are needed for simulating feature filling or more general interface evolution. Because superfill processes based on the CEAC mechanism derive from surface segregation of adsorbates, they not only eliminate void and seam formation but mig...