Graded band gap ohmic contact to <i>p</i>-ZnSe

Fan, Y.; Han, Jung; Li, He; Saraie, Junji; Gunshor, R. L.; Hagerott, M.; Jeon, Heonsu; Nurmikko, A. V.; Hua, G. C.; Ōtsuka, N.

doi:10.1063/1.107945

Cited by 215 publications

(41 citation statements)

References 9 publications

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“…This constitutes a reduction of a E from the reported acceptor binding energy in ZnTe [38], which had already been observed in bulk ZnSe:N [39]. According to what has been discussed in the present work, this smaller value would arise as a conse- quence of many-body effects, which we introduce in the single particle states through the Hartree-Fock potential derived from TFD considerations, but supporting the conjecture of Fan et.…”

Section: Resultssupporting

confidence: 81%

Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Rodrı́guez-Vargas

Gaggero‐Sager²,

Martı́nez-Orozco

2005

Physica Status Solidi (b)

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PACS 73.21.Fg, 73.61.Ga We present the hole sub-band structure study in two p-type δ -doped ZnSe QW's. An analytical expression for the Hartree-Fock potential is obtained following the lines of the Thomas-Fermi-Dirac (TFD) approximation. We have analyzed the dependence of the hole energy levels to the impurity density and the interlayer distance between wells. The exchange effects are also included in the present survey. We find that many body effects cannot be ignored because these are really important in the calculation at least in the low concentration regime. We have obtained an energy difference between the top of the valence band and the ground energy of the heavy hole ladder of 0 29 0in good agreement with the experimental reports ( DAP 2 792 E = . eV) available. We calculate the mobility ratio between double δ -doped QW's and simple δ -doped QW based on a phenomenological formula. We find the optimum interlayer distance between wells for maximum mobility for three impurity concentrations, which can be of great importance for technological applications.

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Section: Resultssupporting

confidence: 81%

Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Rodrı́guez-Vargas

Gaggero‐Sager²,

Martı́nez-Orozco

2005

Physica Status Solidi (b)

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“…The devices are used in optical processing, detecting systems for environmental pollution, and color-displaying modules [1]. To enhance the performance of these optoelectronic devices structural quality [1], ohmic contacts [2], band offsets [3] and device degradation [4] pose serious problems. There is a hunt for credible alternatives to improve performance of optoelectronic devices by minimizing the contact potentials and reducing the lattice mismatch in II-VI compounds.…”

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confidence: 99%

Electronic structure of BeTe and ZnTe

Joshi

Pandya²,

Kothari

et al. 2009

Physica Status Solidi (b)

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The empirical pseudopotential method has been applied to study electronic band structures of BeTe and ZnTe. The band‐structure calculations are performed to study the electron momentum density distribution also in the two semiconductors. The electron momentum distribution is studied in terms of Compton profiles computed along [100], [110], [111], [210], [211] and the [221] directions. The autocorrelation functions have also been computed along the principal crystallographic directions. The band‐by‐band decomposition of autocorrelation functions and the directional Compton profiles are presented. The results are interpreted in terms of band structure. The spherically averaged Compton profile of ZnTe is compared with the available experimental data. On the basis of theoretical anisotropies in the Compton profiles and autocorrelations, bands, bonds and momentum density build up in BeTe and ZnTe semiconductors are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Les semi-conducteurs II-VI sont des matériaux qui promettent énormément du point de vue des applications optoélectroniques [1], précisément dans la réalisation des dispositifs émetteurs de lumière et des détecteurs de lumière [2,3]. Principalement, issu de la famille des semi-conducteurs à gap direct avec une largeur de bande interdite de 2,26 eV (549 nm) à 300K et un paramètre de maille a = 6,10132 Å, le ZnTe est considéré comme la structure appropriée pour la réalisation de diodes émettrices de lumière verte, des photodétecteurs UV-verts et des cellules solaires multi-jonctions [4,5,6,7,8,9,10].…”

Section: Introductionunclassified

Desorption of Te capping layer from ZnTe (100): Auger spectroscopy, low-energy electron diffraction and scanning tunneling microscopy

Sossoe

Dzagli

Sylla

et al. 2016

J. Fundam and Appl Sci.

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The influence of the annealing temperature to desorb a protective Te capping layer of the zinc telluride (ZnTe (100)) surface was investigated. The surface reconstruction of the ZnTe (100) upon the removal of a Te capping layer grown by the molecular beam epitaxy was characterized by different methods. Auger spectroscopy brought out the chemical composition of the surface before and after annealing; the Low-energy electron diffraction (LEED) gave information about the crystallographic structure. The surface crystallographic configurations of tellurium Te (c (2x2)) and Te (c (2x1)) are confirmed by scanning tunneling microscopy (STM). Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases.

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Graded band gap ohmic contact to p-ZnSe

Cited by 215 publications

References 9 publications

Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Electronic structure of BeTe and ZnTe

Desorption of Te capping layer from ZnTe (100): Auger spectroscopy, low-energy electron diffraction and scanning tunneling microscopy

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