Graded band-gap ohmic contacts to <i>n</i>- and <i>p</i>-type InP

Dutta, R.; Shahid, Muhammad Umair; Sakach, P.J.

doi:10.1063/1.348458

Cited by 12 publications

(9 citation statements)

References 14 publications

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“…Similar contacts using either Mn or Mg in place of Zn were not ohmic [63], but a Pd/Zn/Pd contact without the use of Ge was fabricated with contact resistivity in the mid 10-5 Q-cm2 [60]. Finally, contacts based on reducing the surface semiconductor bandgap using W-In-Sb to p-type InP with contact resistivity in the low 10-5 range were also reported [59].…”

Section: Contacts To Inpmentioning

confidence: 99%

A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g. GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n-and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A

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Section: Contacts To Inpmentioning

confidence: 99%

A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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“…(Formation of a narrow bandgap intermediate semiconductor layer (ISL) such as InSb x P 1−x was previously proposed for the contacts with Sb. 5,20) However, InSb x P 1−x was not observed by XTEM with 1 nmφ probe. Therefore, it seemed that the added Sb would not benefit the narrow band gap ISL model.…”

Section: Role Of the Sb First Layermentioning

confidence: 94%

Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP

et al. 2002

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Recently, Sb(3 nm)/Zn(20 nm)/Pd(20 nm) ohmic contact materials to p-type InP which provides high reliable, low contact resistance after annealing at temperature around 375 • C have been developed in our laboratories (where a slash (/) sign indicates the deposition sequence). The use of these contact materials for photodiodes made it possible to achieve simultaneous preparation of both p and n-type ohmic contacts, which resulted in significant reduction of the fabrication process steps. In the present paper in order to understand the mechanism of ohmic contact formation, the microstructural analysis of the interfaces between the Sb/Zn/Pd ohmic contacts and the Zn-doped p-type InP was carried out by X-ray diffraction, cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and electrochemical capacitancevoltage measurement. The present experiments proposed a new contact formation mechanism: reduction of the ohmic contact resistances was obtained primarily due to suppression of Zn (doped in the InP) outdiffusing from the InP substrate during annealing by the Pd 2 InP layers which contained Zn. Thus the direct contact of the Pd 2 InP layers to the InP substrate was found to be essential to prevent reduction of the net acceptor concentration near the InP surface and also to improve the thermal stability of ohmic contacts. The roles of Pd and Sb added to the contact materials also contributed to the reduction of contact resistance and their roles will be discussed.

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“…The ohmic contacts which have a narrow band gap intermediate semiconductor layer ͑ISL͒ such as InSb x P 1Ϫx were previously proposed. 7,20 However, the details of the interfacial microstructure, especially the ISL/InP interfacial structure, were not reported. From the quasibinary phase diagram study on the InP-InSb system, it was reported that solid solutions were formed only in limited regions: x is nearly zero or x is nearly one in the InSb x P 1Ϫx formula.…”

Section: A Ohmic Contact Formation Mechanismmentioning

confidence: 95%

Effect of the first antimony layer on AuZn ohmic contacts to p-type InP

Yamaguchi

Asamizu

Okada

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The electrical properties of the Sb/Zn/Au/Nb ohmic contacts to p-type InP were investigated, where a slash (/) indicates the deposition sequence. The first Sb layer improved the contact resistivity and reduced the optimum annealing temperature, compared with the Au/Zn/Au/Nb contacts whose first layer was Au. The minimum contact resistivity of 4×10−5 Ω cm2 was obtained from the Sb(3 nm)/Zn(5 nm)/Au(10 nm)/Nb(50 nm) contacts annealed at 325 °C for 2 min. The interfacial microstructure was studied using the cross-sectional transmission electron microscope. It was considered that the deposited Sb deoxidized and removed the native oxides of the InP surface and that facilitated the upper Au and Zn diffusion into InP.

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Graded band-gap ohmic contacts to n- and p-type InP

Cited by 12 publications

References 14 publications

A survey of ohmic contacts to III-V compound semiconductors

A survey of ohmic contacts to III-V compound semiconductors

Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP

Effect of the first antimony layer on AuZn ohmic contacts to p-type InP

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