2023
DOI: 10.1016/j.nanoen.2023.108605
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Gradient 2D–3D Ruddlesden-Popper perovskite film for high-performance self-powered photodetectors

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Cited by 20 publications
(13 citation statements)
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“…Moreover, with NDI-DPP mixed with the PPA 2 PbI 4 :MAPbI 3 , the (PPA 2 PbI 4 :MAPbI 3 ):NDI-DPP thin film possesses diffraction peaks in the 2D-α and 2D-β phases (Figure a–c), indicating that NDI-DPP could induce the PPA 2 PbI 4 :MAPbI 3 composite thin film to grow along the vertical direction. Thus, compared to the PPA 2 PbI 4 :MAPbI 3 thin film, the (PPA 2 PbI 4 :MAPbI 3 ):NDI-DPP thin film is anticipated to have enhanced charge carrier mobility …”
Section: Resultsmentioning
confidence: 99%
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“…Moreover, with NDI-DPP mixed with the PPA 2 PbI 4 :MAPbI 3 , the (PPA 2 PbI 4 :MAPbI 3 ):NDI-DPP thin film possesses diffraction peaks in the 2D-α and 2D-β phases (Figure a–c), indicating that NDI-DPP could induce the PPA 2 PbI 4 :MAPbI 3 composite thin film to grow along the vertical direction. Thus, compared to the PPA 2 PbI 4 :MAPbI 3 thin film, the (PPA 2 PbI 4 :MAPbI 3 ):NDI-DPP thin film is anticipated to have enhanced charge carrier mobility …”
Section: Resultsmentioning
confidence: 99%
“…As a result, at RT, the ternary MHPs-conjugated polymer PDs exhibit a photoresponse ranging from 370 to 1200 nm, a detectivity of ∼10 11 cm Hz 1/2 W −1 (jones) in the UV−visible region, and a detectivity of ∼10 10 jones in the NIR region. 28 To verify the above hypothesis, the electron mobilities of both PPA 2 PbI 4 :MAPbI 3 and (PPA 2 PbI 4 :MAPbI 3 ):NDI-DPP thin films are studied according to the space charge limited current (SCLC) method, which is based on the Mott−Gurney model. 29,30 The electron mobility (μ e ) is described as J = (9εε 0 μv 2 )/(8L 3 ), where J is the current density, V is the external bias, L is the thickness of the active layer, ε 0 is the vacuum permittivity (8.55 × 10 −12 F m −1 ), and ε is the relative dielectric constant for the active layer.…”
Section: Introductionmentioning
confidence: 99%
“…When dark current is dominated by shot noise, 1/f noise can be ignored. 37,38 D* can be calculated using the following formula:…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The noise of a photodetector working at a nonlow frequency is mainly caused by the shot noise from the dark current. When dark current is dominated by shot noise, 1/f noise can be ignored. , D * can be calculated using the following formula: D * = R A rea 2 q I dark where A rea refers to the effective area of the detector and q represents the elementary charge. Figure d, e shows the relationship curves of responsivity and detectivity with applied bias voltage under different white light intensities of the optimized device.…”
Section: Resultsmentioning
confidence: 99%
“…In recent years, the predominant use of metal-based materials for photodetector synthesis has become a common practice. Despite their widespread use, these photodetectors often fall short in terms of efficiency when it comes to light detection and response [4][5][6]. Notably, the development of infrared (IR) photodetectors has involved the utilization of CuO nanowires.…”
Section: Introductionmentioning
confidence: 99%