Grain-Boundary Effects on the Charge Transport Behavior of Quasi-2D Graphene/PVDF for Electrostatic Control of Power Dissipation in GFETs

Abstract

We present here the effect of grain boundaries on the charge transport properties of quasi-2D graphene/PVDF nanocomposite (QGN)-based field-effect transistor (QGN-FET) devices with active thermal management. Scanning tunneling microscopy (STM) has been employed to explore the grain-boundary formation across the slow-scan directions at 10 mV. The average device capacitance of the QGN turns out to be around 1.5 nF with a mean extinction ratio of 51 dB, making it amicable, especially for storage applications. However, thermal device designing remains often challenging for achieving better-performance nanoscale transistors. Utilizing electrostatic analysis, the I−V characteristics along with the carrier density and the temperature effect in QGN-FET were realized, while the thermal bistability at V GS = 25 V. Our finite-element analysis, on the other hand, suggests that the thermal energy can provide more pathways for heat propagation at 25 V. Thus, reducing the hotspot temperature would increase, otherwise monotonically, with the associated heat flux.

Defect-Oriented 2D Nanocomposites as Flexible Piezoelectric Nanogenerators: Encapsulation Effect

“…5d. 47 Experimentally at 1 nm, the tunneling property was high ECS Journal of Solid State Science and Technology, 2021 10 071005 as compared to other distances. Hence, if we fabricate a device at a tip distance of 1 nm, it may lead to modification of the chemical functionality of the sample.…”

“…The sample proves its stability that can be well related with our previous results. 47 The comparison of output voltage performance of the GLP sample is briefly described in Table I. The maximum average harvesting power was achieved with PV of 1.5 × 10 −7 when compared to RV (4 × 10 −8 ) and FS (1 × 10 −8 ), respectively as given in Fig.…”

Current crowding in graphene–silicon schottky diodes

“…Interfacial defects at graphene-metal contact often compromise the current carrying capability of the device and the switching speed. When the excessive heat is not dissipated properly, it accumulates in channel material leading to the device breakdown [20,[22][23][24][25].…”

“…The 2D-3D contact, such as graphenemetal contact, suffers from interfacial defects, and weak contact compromises the device's current carrying capability and switching speed. When the excessive heat energy is not dissipated properly, it can lead to the device breakdown that creates permanent damage to the material [20,[22][23][24][25]. To The D peak is not observable in pristine graphene due to crystalline symmetry in the lattice [38].…”