Grain-boundary/interface structures and scatterings of ruthenium and molybdenum metallization for low-resistance interconnects

Chen, Yulin; Fang, Yi-Ying; Lu, Ming; Keng, Pei Yuin; Chang, Shou-Yi

doi:10.1016/j.apsusc.2023.157440

Cited by 9 publications

References 36 publications

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Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO₂ Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

Oh,

Thelven,

Margavio

et al. 2024

Adv Funct Materials

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Area‐selective deposition (ASD) is a forefront nanopatterning technique gaining substantial attention in the semiconductor industry. While current research primarily addresses single‐material ASD, exploring multi‐material ASD is essential for mitigating complexity in advanced nanopatterning. This study describes molybdenum hexafluoride (MoF6)‐mediated fluorination/passivation of the hydroxylated SiO2 (SiO2‒OH) at 250 °C as a new method to pacify nucleation during subsequent ZnO and TiO2 atomic layer deposition (ALD). In contrast, Al2O3 ALD is not passivated on the fluorinated SiO2 (SiO2‒F). The study further shows that Mo ALD using MoF6 and silane (1 wt% SiH4 in Ar) selectively proceeds on hydrogen‐terminated Si (Si‒H), whereas SiO2‒OH becomes fluorine‐passivated without observable Mo deposition. This enables subsequent ZnO and TiO2 ASD on Mo versus SiO2‒F, as confirmed by X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and scanning transmission electron microscopy (STEM). Proposed growth and inhibition mechanisms highlight the importance of the metal oxide precursor in achieving selectivity. Taken together, self‐aligned Mo/ZnO and Mo/TiO2 nanoribbons are demonstrated on coplanar nanoscale Si‒H/SiO2‒OH patterns by sequentially integrating two individual ASD processes: 1) Mo ASD on Si‒H versus SiO2‒OH; and 2) ZnO or TiO2 ASD on Mo versus SiO2‒F. This work highlights the potential for this approach in new ASD systems.

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Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO₂ Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

Oh,

Thelven,

Margavio

et al. 2024

Adv Funct Materials

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Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Kim,

Kang,

et al. 2023

Plasma Processes & Polymers

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The plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per cycle (EPC) of 1.5 nm/cycle was achieved with C4F8 plasma, in contrast to the 0.6 nm/cycle achieved with CHF3 plasma. Moreover, chemisorption and diffusion with CF4 plasma yielded an EPC of 1.2 nm/cycle. The ALE process using CHF3 plasma shows the lowest fluorine residue and lowest surface roughness compared with the ALE process using C4F8 and CF4 plasmas.

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Equipment and manufacturability issues in chemical vapor deposition processes

Chow

2025

Handbook of Thin Film Deposition

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Grain-boundary/interface structures and scatterings of ruthenium and molybdenum metallization for low-resistance interconnects

Cited by 9 publications

References 36 publications

Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO₂ Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO₂ Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Equipment and manufacturability issues in chemical vapor deposition processes

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Grain-boundary/interface structures and scatterings of ruthenium and molybdenum metallization for low-resistance interconnects

Cited by 9 publications

References 36 publications

Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO2 Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO2 Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Equipment and manufacturability issues in chemical vapor deposition processes

Contact Info

Product

Resources

About

Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO₂ Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons

Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO₂ Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons