Grain Boundary Reactive Diffusion in Ni2Si Thin Films

Lösch, Wolfgang; Acchar, Wilson

doi:10.1002/(sici)1521-396x(199905)173:1<275::aid-pssa275>3.0.co;2-g

Cited by 3 publications

(1 citation statement)

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“…Details of the sample preparations, growth studies and reactive diffusion processes to obtain Ni 2 Si/Si(100) and Ni 2 Si/Si(111) are presented and dicussed elsewhere [1,2,4]. Conventional transmission electron microscopy self-supporting specimens were prepared using ultrasonic drilling to obtain a 3 mm disc followed by thinning the substrates to about 200 mm.…”

Section: Methodsmentioning

confidence: 99%

High Resolution Electron Microscopy Study of Nanostructured Ni2Si Thin Films

Bernardo

Almeida

Lösch

1999

phys. stat. sol. (a)

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Section: Methodsmentioning

confidence: 99%

High Resolution Electron Microscopy Study of Nanostructured Ni2Si Thin Films

Bernardo

Almeida

Lösch

1999

phys. stat. sol. (a)

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Microstructural and Electrical Behaviour of Mg2Si Thin Films Synthesized via rf Sputtering

Gupta,

Howlader,

Asokan

et al. 2024

Silicon

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Enhanced mass transport in ultrarapidly heated Ni/Si thin-film multilayers

Cook

Cavicchi

Bassim

et al. 2009

Journal of Applied Physics

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We investigated multilayer and bilayer Ni/Si thin films by nanodifferential scanning calorimetry ͑nano-DSC͒ at ultrarapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower scan rates as well, where it was possible to conduct parallel rapid thermal annealing experiments for comparison. Postexperimental characterization was accomplished by x-ray diffraction, and by transmission electron microscopy ͑TEM͒ and energy-filtered TEM of thin cross sections prepared by focused ion beam milling. We found that rate of heating has a profound effect on the resulting microstructure, as well as on the DSC signal. After heating to 560°C at 120°C / s, the general microstructure of the multilayer was preserved, in spite of extensive interdiffusion of Ni and Si. By contrast, after heating to 560°C at 16 000°C / s, the multilayer films were completely homogeneous with no evidence of the original multilayer microstructure. For the slower scan rates, we interpret the results as indicating a solid state diffusion-nucleation-growth process. At the higher scan rates, we suggest that the temperature increased so rapidly that a metastable liquid was first formed, resulting in complete intermixing of the multilayer, followed by crystallization to form solid phases. The integrated DSC enthalpies for both multilayer and bilayer films are consistent with this interpretation, which is further supported by thermodynamic predictions of metastable Ni/Si melting and solid state Ni/Si interdiffusion. Our results suggest that use of heating rates Ͼ10 000°C / s may open new avenues for intermetallic micro-and nanofabrication, at temperatures well below those prevailing during explosive silicidation.

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Grain Boundary Reactive Diffusion in Ni2Si Thin Films

Cited by 3 publications

References 10 publications

High Resolution Electron Microscopy Study of Nanostructured Ni2Si Thin Films

High Resolution Electron Microscopy Study of Nanostructured Ni2Si Thin Films

Microstructural and Electrical Behaviour of Mg2Si Thin Films Synthesized via rf Sputtering

Enhanced mass transport in ultrarapidly heated Ni/Si thin-film multilayers

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