Grain-Boundary Resistance in Polycrystalline Metals

Reiss, Günter; Vancea, Johann; Hoffmann, H.

doi:10.1103/physrevlett.56.2100

Cited by 192 publications

(85 citation statements)

References 18 publications

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“…Conductivity as well as TCR are lower than the bulk value (s 293K = 2.56´10 6 S m -1 at 293 K and TCR = 5.50´10 -3 K -1 for bulk titanium). It is commonly observed for metallic thin films and mainly attributed to the scattering of electrons at the grain boundaries [11]. …”

Section: A Besnard Et Almentioning

confidence: 99%

Metal-to-Dielectric Transition Induced by Annealing of Oriented Titanium Thin Films

Besnard

Martin

Sthal

et al. 2013

Funct. Mater. Lett.

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible.This is an author-deposited version published in: http://sam.ensam.eu Handle ID: .http://hdl.handle.net/10985/7486 To cite this version :Aurélien BESNARD, Nicolas MARTIN, Nicolas STAHL, Luc CARPENTIER, Jean-Yves RAUCHMetal-to-Dielectric transition induced by annealing of oriented titanium thin films -Functional Materials Letter -Vol. 6, n°1, p.5 -2013 Any correspondence concerning this service should be sent to the repository Titanium thin films were deposited by dc magnetron sputtering. The GLancing Angle Deposition (GLAD) method was implemented to prepare two series of titanium films: perpendicular and oriented columnar structures. The first one was obtained with a conventional incidence angle a of the sputtered particles (a = 0°), whereas the second one used a grazing incidence angle a = 85°. Afterwards, films were annealed in air following 6 incremental cycles of temperatures ranging from 293 to 773 K. Dc electrical conductivity was measured during the annealing treatment. Films deposited by conventional sputtering (a = 0°) kept a typical metallic-like behavior versus temperature (s300K = 2.0´10 6 S m -1 and TCR293K = 1.52´10 -3 K -1 ), whereas those sputtered with a = 85° showed a gradual transition from metallic to dielectric material. Such a transition was mainly attributed to the high porous structure, which favors the oxidation of titanium films to tend to the TiO2 compound.Keywords: Sputtering, thin films, electrical properties, metal, dielectric. * Corresponding authorMetal-insulator transitions have been investigated for many years [1]. They often arise from variations of the chemical composition, temperature, stress, electric or magnetic field, etc. [2][3][4]. They correspond to a transformation between states with a dielectric (or semiconductor) and a metallic type of conductivity. Materials exhibiting these phenomena include binary compounds of transition metal oxides. As a result, these transitions have largely been explored for bulk materials like vanadium oxides [5], but few studies have been devoted to such transitions for other materials [6] and to the best of our knowledge, never for thin films exhibiting an oriented columnar structure.In this work, we report on the effect of an annealing treatment on the micro-structural properties, optical behaviors and dc electrical conductivity of titanium films sputter deposited. Two series of samples were prepared. The first one was conventionally prepared with a normal incidence angle a of the sputtered particles (a = 0°). For the second series, the GLancing Angle Deposition (GLAD) was implemented to produce an oriented columnar structure. An incidence angle a = 85° was used to deposit an oriented structure. Both series were heated in air following 6 cycles from 293 to 773 K. Titanium films obtained at normal incidence (a = 0°) kept a metallic-like behavior, whereas those deposited by GLAD (a = 85° )...

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Section: A Besnard Et Almentioning

confidence: 99%

Metal-to-Dielectric Transition Induced by Annealing of Oriented Titanium Thin Films

Besnard

Martin

Sthal

et al. 2013

Funct. Mater. Lett.

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“…The decrease of conductivity is attributed to the increase of grain boundaries, dislocations and large-angle grain boundaries caused by grain refinement. As is well known, grain boundaries and dislocations can increase the scattering of conducting electrons, leading to the increase of the electrical resistivity of the metal [8]. In addition, the large-angle grain boundaries have a large effect on the scattering of conducting electrons, greater than that of the low-angle grain boundaries [19].…”

Section: Conductivitymentioning

confidence: 99%

“…to pure copper [3][4][5][6] or applying hardening processes (such as drawing or rolling) [6]. Those conventional strengthening methods induce various kinds of defects (dislocations, reinforcing phases, point defects, grain boundaries), raising electrical resistivity of Cu alloy because of the scattering of conducting electrons [7,8]. For example, a Cu-0.7%Cr-0.3%Fe alloy, after cold working (40% CW), plus aged at 450 °C for 90 min, had the ultimate tensile strength of 460 MPa and an electrical conductivity of about 67% IACS (International Annealed Copper Standard, 17.24 × 10 −9 Ωm is defined as 100% IACS) [9].…”

Section: Introductionmentioning

confidence: 99%

Grain Refinement and High-Performance of Equal-Channel Angular Pressed Cu-Mg Alloy for Electrical Contact Wire

Zhu

Jiang

et al. 2014

Metals

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Multi-pass equal-channel angular pressing (EACP) was applied to produce ultrafine-grained (UFG) Cu-0.2wt%Mg alloy contact wire with high mechanical/electric performance, aim to overcome the catenary barrier of high-speed trains by maximizing the tension and improving the power delivery. Microstructure evolution and overall properties of the Cu-Mg alloy after different severe-plastic-deformation (SPD) routes were investigated by microscopic observation, tensile and electric tests. The results show that the Cu-Mg alloy after multi-pass ECAP at 473 K obtains ultrafine grains, higher strength and desired conductivity. More passes of ECAP leads to finer grains and higher strength, but increasing ECAP temperature significantly lower the strength increment of the UFG alloy. Grain refinement via continuous SPD processing can endow the Cu-Mg alloy superior strength and good conductivity characteristics, which are advantageous to high-speed electrification railway systems.

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“…1b was constructed under the assumption that the nanocomposite consists of two materials: palladium (white circles) in the form of nanocrystallites and carbon (grey region) forming a matrix in which the nanograins of palladium are embedded. The problem of the transport of electrons through such material can be considered, similarly as in [2,3], as a flow of electrons along the conductivity paths formed by nanocrystallites.…”

Section: Introductionmentioning

confidence: 99%

“…It is a result of the increase of a number of boundaries of grains, a number of triple junctions and the increase of disorder in existing layers. In [2] and [3] the authors use the notion of coefficient of nanograins packing of material. The small packing coefficient means that the nanograins are located far away from each other.…”

Section: Introductionmentioning

confidence: 99%

Modelling of electric current flow in 1D Pd-C nanostructure: comparison with experiment

Bielski¹,

Kowalczyk²,

Czerwosz³

et al. 2014

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. In this paper we propose a model of electric current flow through one-dimensional palladium-carbon nanostructure (nanowire) and compare the results of numerical computations with the experimental data. We focus on two aspects: 1) calculation of the current flow through the nanowire model, 2) determination of the macroscopic parameters in the nanocomposite in our model. Because of a complex micro-geometry of a nanowire, we apply the homogenization method to perform the numerical computations.

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Grain-Boundary Resistance in Polycrystalline Metals

Cited by 192 publications

References 18 publications

Metal-to-Dielectric Transition Induced by Annealing of Oriented Titanium Thin Films

Metal-to-Dielectric Transition Induced by Annealing of Oriented Titanium Thin Films

Grain Refinement and High-Performance of Equal-Channel Angular Pressed Cu-Mg Alloy for Electrical Contact Wire

Modelling of electric current flow in 1D Pd-C nanostructure: comparison with experiment

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