Grain Boundary Scattering in Polycrystalline InSb

Abstract

Furthermore, this model explains well the lower life time in polycrystalline semiconductors (CARD, YANG) and the qualitative behaviour of the mobility versus doping concentration (KAIVUNS). For large dopant concentrations the interface states are filled and the boundary potential decreases towards zero and the polycrystalline semiconductor approaches the monocrystalline behaviour, as shown by KAMINS. However, from the theoretical point of view, this model is incomplete, in the sense that it does not consider how the transport from grain to grain takes place. For lowangle grain boundary potentials, the VOLGER model could be a suitable approach ; but for large boundary potentials, the transmission of the carriers across the potential barrier of the grain boundary must be taken into account.