Grain flash temperatures in diamond wire sawing of silicon

Abstract

Diamond wire sawing has obtained 90% of the single-crystal silicon–based photovoltaic market, mainly for its high production efficiency, high wafer quality, and low tool wear. The diamond wire wear is strongly influenced by the temperatures in the grain-workpiece contact zone; and yet, research studies on experimental investigations and modeling are currently lacking. In this direction, a temperature model is developed for the evaluation of the flash temperatures at the grain tip with respect to the grain penetration depth. An experimental single-grain scratch test setup is designed to validate the model that can emulate the long contact lengths as in the wire sawing process, at high speeds. Furthermore, the influence of brittle and ductile material removal modes on cutting zone temperatures is evaluated.

Surface integrity of monocrystalline silicon nanostructured with engineered multi-tip diamond tools

“…The different trends in pressure with increasing cutting speed at 70 and 250 nm/rev feed may be related to the combined effect of thermal softening of the material due to increasing temperature at the cutting zone and material strengthening due to increasing strain rate [12]. Pala et al [15] developed a flash temperature model for diamond wire cutting of silicon. They showed that at nanometric cutting depths, flash temperatures would reach to up to 2500 K.…”