Grain growth and characteristics of chlorine doped thick polycrystalline CdZnTe films

Yoshimatsu, Akina; Yoshimuta, Toshinori; Tokuda, S.; Kishihara, Hiroyuki; Kaino, Masatomo; Doki, Takahiro; Sato, Toshiyuki; Okamoto, Tamotsu

doi:10.1109/nssmic.2012.6551945

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2016

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“…3,4 The doping CdZnTe films can be prepared by various methods, including thermal evaporation, radio frequency (rf) magnetron sputtering, electrodeposition and closed space sublimation. [5][6][7][8] However, these methods suffered the problem of defects and non-uniform composition during the deposition process, thus causing descend of resistivity and homogeneity in CdZnTe film, which limits its application. From this reason, rf magnetron sputtering with aluminium induced crystallisation (AIC) method was proposal to fabricate high resistivity Al doped CdZnTe films.…”

Section: Introductionmentioning

confidence: 99%

Properties of Al doped CdZnTe film by aluminium induced crystallisation

Zeng

Meng

et al. 2016

Surface Engineering

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Al doped CdZnTe film was prepared by radio frequency magnetron sputtering with aluminium induced crystallisation. Structural and electric properties of Al doped CdZnTe film were studied. Al doped CdZnTe film has a preferred [111] orientation with uniform pebble-like grain structure, and the leakage current is 2?3610 28 A. Current conduction mechanism in Al doped CdZnTe film has been investigated and analysed. Space charge limited current emission is found to be the dominant mechanism in Al doped CdZnTe film, which was associated with trapping process of Cd vacancies.

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