Grain growth in nanocrystalline SnO2 prepared by sol-gel route

Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor

“…This study confirms the substantially higher thermal stability of the ordered mesoporous In 2 O 3 prepared by structure replication at 300 8C in the presence of the rigid silica skeleton. We can therefore exclude that prolonged usage of our materials as gas sensors at elevated temperature will lead to substantial structural changes by sintering effects or grain growth due to ripening phenomena, a problem which is frequently encountered with conventional materials, [33,34] as discussed above.…”

“…[31] However, many mesoporous metal oxides that are prepared by conventional sol-gel methods [32] are prone to loss of porosity at elevated temperatures owing to sintering effects as well as grain growth by thermally induced ripening phenomena. [33,34] Since sensor devices are often operated at temperatures of several hundred degrees Celsius, such thermal instability needs to be avoided.…”

Effect of Second Phase Particles on Grain Growth for Nanocrystalline AZ31 Mg Alloy by Phase Field Methods

“…The value of grain boundary range is 1.2 μm in microstructures [9] , it is too large for grains in nano-scales whose grain size is less than 1μm and the grain boundary range will have no physical meaning if it covers more than two grains. The volume fraction of grain boundaries increases dramatically when the grain size decreases [25] and reference [26] showed that 02006-p.2 EMME 2015 the nanocrystalline materials might consist of over 50% of geometric boundary regions (interface component) depending on the average grain size. Therefore, we suggest that the nanocrystalline materials will have a grain boundary range which covers up to nearly two whole adjacent grains as seen in Figure 1.…”

Preparation and humidity sensing behaviors of nanostructured potassium tantalate: titania films

“…reactive magnetron sputtering [5,6], pulsed laser deposition [7], chemical vapor deposition [8], atomic layer deposition [9], ion-implantation technique [10], and sol-gel process [11][12][13][14]. The sol-gel process has distinct advantages over the other techniques due to excellent compositional control, homogeneity on the molecular level due to the mixing of liquid precursors, and lower crystallization temperature.…”