Grain growth in sputtered nanoscale PdIn thin films

Huang, Mianliang; Wang, Yunzhi; Chang, Y. A.

doi:10.1016/j.tsf.2003.10.081

Cited by 21 publications

(9 citation statements)

References 26 publications

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“…2, where they show a good fit to the dynamical scaling law S ∝ t B [25]. The growth exponent B = 0.44 is within the 0.2-0.7 range that has been reported for other metallic thin films [25][26][27]. Fig.…”

Section: Resultssupporting

confidence: 80%

Surface-properties relationship in sputtered Ag thin films: Influence of the thickness and the annealing temperature in nitrogen

Guillén

Herrero

2015

Applied Surface Science

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Section: Resultssupporting

confidence: 80%

Surface-properties relationship in sputtered Ag thin films: Influence of the thickness and the annealing temperature in nitrogen

Guillén

Herrero

2015

Applied Surface Science

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“…It is experimentally confirmed for a wide range of case. 18,[25][26][27][28][29][30][31] In our experimental deposition conditions, the thickness h of the deposited Au film is proportional to the deposition time t: h = at being a Ϸ 6.67ϫ 10 −2 nm/ s. Therefore Eq. ͑1͒ can be reconsidered as…”

Section: Basic Theory and Discussion: Normal And Abnormal Grain Gmentioning

confidence: 99%

Normal and abnormal grain growth in nanostructured gold film

Ruffino

Grimaldi

Bongiorno

et al. 2009

Journal of Applied Physics

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Thin nanostructured gold films were deposited on SiO 2 by the sputtering technique at room temperature. Films of different thicknesses were deposited ranging from 2 to 16 nm. The film morphology as a function of the thickness was analyzed by microscopic techniques such as atomic force microscopy and transmission electron microscopy. These analyses allowed us to clarify the growth mechanism of the gold nanograins forming the film: in a first stage of growth ͑2-6 nm͒ normal grain growth proceeds; then ͑8-16 nm͒ the grain surface energy anisotropy drives the growth of abnormal large gold grains by annihilation of the normal ones. During the abnormal growth other normal grain continue to growth. The normal grain size distribution is showed to be a monomodal log-normal distribution that evolves toward larger mean grain radius continuously following a scaling law. By determination of the grain growth exponent, the kinetic mechanism responsible of the grain growth is demonstrated to be the gold atomic diffusion on grain boundaries. By fitting the experimental data using established theoretical models, the room-temperature gold grain boundary coefficient diffusion and mobility were derived. The abnormal grain grows, manifest itself as a bimodal grain size distribution: with the log-normal distribution of the normal grain size, a second Gaussian grain size distribution rises, shifting toward lower size increasing the film thickness. The abnormal grain growth continues until all the abnormal grain boundaries meet each other.

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“…3 for the sample heated up to 430 • C indicate that the defects concentration is less than that in the as-deposited sample. In the previous study of the grain growth in nanoscale PdIn thin films [18], it was found that the grain sizes did not change very much at an annealing temperature lower than 300 • C, but significant grain growth was observed when the annealing temperature is higher than 420 • C.…”

Section: Discussionmentioning

confidence: 94%

“…The DSC peak at about 500 • C indicates that there is a disorder-order phase transformation, even though the ordered structure cannot be directly determined from the XRD and SAED patterns because the similar scattering factors of Pd and In preclude the detection of superlattice lines as in the ordered B2 compound PdIn [18,19]. Hence, the crystal structure of annealed Pd 3 In films is not disordered face centered tetragonal but more likely an ordered tetragonal.…”

Section: Discussionmentioning

confidence: 99%