1968
DOI: 10.1111/j.1151-2916.1968.tb11896.x
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Grain Growth in UO2‐Al,O3 in the Presence of a Liquid Phase

Abstract: The theory of grain growth in the presence of a liquid phase is examined using modifications of equations derived for coalescence of solid particles widely dispersed in a liquid. Although the grain diameter-time relation can still be represented by d3 = k t , the absolute growth rates are increased a s the amount of liquid is decreased. The grain growth kinetics in UOZ compacts containing 0.5 wtyo A1203 were studied for temperatures between 1960' and 2200°C. T h e interrelation of grain size, temperature, and … Show more

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Cited by 91 publications
(20 citation statements)
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“…However, with progress of grain growth, the liquid phase layer became thicker and thicker and a possible transformation of mechanism from solution-reprrecipitation process to diffusion of atoms through the Bi 2 O 3 -rich liquid layer would occur. In this case, the grain growth rate would be expressed by dG/dt = 2DSMσ/kTρδ(G/(G 0 − 1)) (where D is the diffusion constant of the solid in the liquid, S the solubility of a flat surface, σ the solid-liquid surface energy, ρ the density of the solid, δ the thickness of the liquid layers, and G 0 is the critical grain radius below which the grains dissolve and above which they grow) [24]. It means that grain growth rate is dependent on the thickness of the liquid phase layer.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…However, with progress of grain growth, the liquid phase layer became thicker and thicker and a possible transformation of mechanism from solution-reprrecipitation process to diffusion of atoms through the Bi 2 O 3 -rich liquid layer would occur. In this case, the grain growth rate would be expressed by dG/dt = 2DSMσ/kTρδ(G/(G 0 − 1)) (where D is the diffusion constant of the solid in the liquid, S the solubility of a flat surface, σ the solid-liquid surface energy, ρ the density of the solid, δ the thickness of the liquid layers, and G 0 is the critical grain radius below which the grains dissolve and above which they grow) [24]. It means that grain growth rate is dependent on the thickness of the liquid phase layer.…”
Section: Discussionmentioning
confidence: 99%
“…Grain growth kinetics can be expressed by the relation D n t − D n 0 = k 0 t exp(−Q/RT ) (where D t is the average grain size at time t, D 0 the initial grain size, n the kinetic grain growth exponent, Q the apparent activation energy, k 0 the coefficient, R and T are ideal gas constant and absolute temperature) [24,25]. This equation clearly indicates that, at a given time and temperature, the final grain size is related to the activation energy Q associated with the specific grain growth.…”
Section: Discussionmentioning
confidence: 99%
“…If the grains remained separated, then several existing treatments would be applicable. [6,29,51] However, the concomitant loss of solid-liquid interface with grain agglomeration, along with grain coalescence, is a major complication. German [7,52] empirically isolated a liquid volume fraction effect on the grain growth rate constant in liquid phase sintering.…”
Section: Introductionmentioning
confidence: 99%
“…For example, lead-base solders are liquid-phase sintered at temperatures barely exceeding 500 K, tungsten-nickel-iron composites, tungsten-nickel-copper composites, and carbide-metal composites at about 1750 K, and an UO2-A12C>3 ceramic 5 at about 2500 K.…”
Section: Introductionmentioning
confidence: 99%