. (2017) Structural stability of naphthyl end-capped oligothiophenes in organic field-effect transistors measured by grazingincidence X-ray diffraction in operando. Organic Electronics.
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AbstractWe report on microstructural durability of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) in organic field effect transistors (OFETs) in operando monitored by grazing-incidence X-ray diffraction (GIXRD). NaT2 maintains its monoclinic bulk motif in operating OFETs with a = 20.31 ± 0.06Å, b = 6.00 ± 0.01Å, c = 8.17 ± 0.04Å and β = (96.64 ± 0.74)• . Crystallites appear as a mosaic of single crystals reaching through the whole 50 nm thick active layer. The lattice parameters variation (<1%) falls within the statistical error of structure refinement when the OFET gate voltage is varied from 0 V to -40 V; or when the OFET is continuously cycled within this voltage interval over more than 10 h period. Within the first few cycles, both the hole mobility and threshold voltage are changing but then reach stable levels with an average mobility of (3.25 ± 0.04) × 10 −4 cm 2 /Vs and an average threshold voltage of −13.6 ± 0.2 V, both varying less than 4% for the remainder of the 10 h period. This demonstrates crystalline stability of NaT2 in operating OFETs.