Grain size and grain boundary characteristics on the out-plane thermal conductivity of &lt;111&gt;-oriented CVD 3C–SiC

Ding, Wei; Lu, Pengjian; Xu, Qingfang; Zhang, Chitengfei; Tu, Rong; Zhang, Song

doi:10.1016/j.ceramint.2024.04.101

Cited by 3 publications

(1 citation statement)

References 51 publications

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“…Introducing a buffer layer can effectively mitigate this gradient and enhance interface integrity. Previous studies have primarily focused on the growth process’s effects on the epitaxial layer, with limited research examining its impact on both the buffer and subsequent epitaxial layers [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. This study systematically investigates the effects of the growth process on the buffer layer and subsequent epitaxial layer in the production of 6-inch 4H-SiC epitaxial wafers.…”

Section: Introductionmentioning

confidence: 99%

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Yang,

Guo,

Zhao

et al. 2024

Materials

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In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2 etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer’s C/Si ratio and growth pressure significantly influence the overall quality of the epitaxial wafer. Specifically, an optimal C/Si ratio of 0.5 and a growth pressure of 70 Torr yield higher-quality epitaxial layers. Additionally, the pre-carbonization time and H2 etching time primarily affect the uniformity and surface quality of the epitaxial wafer, with a pre-carbonization time of 3 s and an H2 etching time of 3 min found to enhance the surface quality of the epitaxial layer.

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Section: Introductionmentioning

confidence: 99%

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Yang,

Guo,

Zhao

et al. 2024

Materials

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Three-dimensional dual graphene anchors ultrafine silicon by a reinforced interface as advanced anode for lithium-ion batteries

Xu,

Guo,

Wang

et al. 2025

Materials Today Energy

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Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Pei,

Yuan,

et al. 2024

Micromachines

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To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately controlled at 0.72, the density of defects in the epitaxial wafer was the lowest, and its surface flatness showed the best state. In addition, it was found that the growth of the buffer layer under specific conditions could effectively reduce defects, especially surface morphology defects. This provides a new idea and method for improving the surface quality of epitaxial wafers. At the same time, we also studied the influence of hydrogen etching on the quality of epitaxial wafers. The experimental results show that proper hydrogen etching can optimize surface quality, but excessive etching may lead to the exposure of substrate defects. Therefore, it is necessary to carefully control the conditions of hydrogen etching in practical applications to avoid adverse effects. These findings have important guiding significance for optimizing the quality of epitaxial wafers.

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Grain size and grain boundary characteristics on the out-plane thermal conductivity of <111>-oriented CVD 3C–SiC

Cited by 3 publications

References 51 publications

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Three-dimensional dual graphene anchors ultrafine silicon by a reinforced interface as advanced anode for lithium-ion batteries

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

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