Grain size dependence of hardness and fracture toughness in pure near fully-dense boron carbide ceramics

Moshtaghioun, Bibi Malmal; Gómez-Garcı́a, Diego; Domínguez‐Rodríguez, Arturo; Todd, Richard I.

doi:10.1016/j.jeurceramsoc.2016.01.017

Cited by 117 publications

(67 citation statements)

References 36 publications

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“…The structural parameters and the enthalpy of formation for all these structures are summarized in Table 2. Experimentally, we targeted a B/C ratio of B 13 C 2 , which has a density of 2.50 g/cm 3 . This is slightly lower than the density of B 4 C (2.52 g/cm 3 ).…”

Section: Resultsmentioning

confidence: 99%

“…Experimentally, we targeted a B/C ratio of B 13 C 2 , which has a density of 2.50 g/cm 3 . This is slightly lower than the density of B 4 C (2.52 g/cm 3 ). The length of Si-C bond in the C-Si-C chain is 1.79 Å, which is larger than the C-B bond length (1.43 Å) in C-B-C, leading to a further density decrease to 2.47 g/cm 3 , which correspond to the lattice parameters increased by 0.67% compared to B 4 C. The M A N U S C R I P T…”

Section: Resultsmentioning

confidence: 99%

“…B 12 icosahedra serve as a signature to this class of compounds. Boron carbide is one of the most important members of this class, owing to its extremely high hardness (30 GPa), high Hugoniot elastic limit (15)(16)(17)(18)(19)(20), and still a low theoretical density (~ 2.52 g/cm 3 ) [1]. It consists of a three-atom chain, typically a C-B-C chain in addition to B 12 or B 11 C p icosahedra [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…It consists of a three-atom chain, typically a C-B-C chain in addition to B 12 or B 11 C p icosahedra [1,2]. Boron carbide is a material of interest for personal body armor, abrasives, neutron capture and high pressure nozzles owing to the afore-mentioned blend of properties but its low fracture toughness [3] limits its widespread usage. Formation of nanoscale amorphous bands is believed to be responsible for the subsided ballistic performance of boron carbide under high velocity impacts [4].…”

Section: Introductionmentioning

confidence: 99%

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Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism

et al. 2018

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The well-documented formation of amorphous bands in boron carbide (B 4 C) under contact loading has been identified in the literature as one of the possible mechanisms for its catastrophic failure. To mitigate amorphization, Si-doping was suggested by an earlier computational work, which was further substantiated by an experimental study. However, there have been discrepancies between theoretical and experimental studies, about Si replacing atom/s in B 12 icosahedra or the C-B-C chain. Dense single phase Si-doped boron carbide is produced through a conventional scalable route. A powder mixture of SiB 6 , B 4 C, and amorphous boron is reactively sintered, yielding a dense Si-doped boron carbide material.A combined analysis of Rietveld refinement on XRD pattern coupled with electron density difference Fourier maps and DFT simulations were performed in order to investigate the location of Si atoms in boron carbide lattice. Si atoms occupy an interstitial position, between the icosahedra and the chain. These Si atoms are bonded to the chain end C atoms and result in a kinked chain. Additionally, these Si atoms are also bonded to the neighboring equatorial M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT2 B atom of the icosahedra, which is already bonded to the C atom of the chain, forming a bridge like geometry. Si atoms are found to reside around the chain, resulting in a kinked chain. These Si atoms lie close to boron atom of the neighboring icosahedra. Owing to this bonding, distance suggests weak bonding and Si is anticipated to stabilize the icosahedra through electron donation, which is expected to help in mitigating stress-induced amorphization. Possible supercell structures are suggested along with the most plausible structure for Si-doped boron carbide.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism

et al. 2018

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“…The twin substructure in steels is the most important factor that reduces fracture toughness of the martensitic steel. Phase transformation twins are significant obstacles for dislocations movement, 26,27) and they often become the core of the crack initiation. Therefore, avoiding the formation of phase transformation twins and reducing the number of twins are important.…”

Section: 7)mentioning

confidence: 99%

Mechanical Properties and Microstructures of a Novel Low-carbon High-silicon Martensitic Steel

Xia

Zhang

et al. 2017

ISIJ International

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A novel low-carbon high-silicon martensitic steel, 22SiMnCrNiMo, whose comprehensive mechanical properties approach the 00Ni18Co9Mo4Ti maraging steel, was investigated. Microstructure characterizations revealed that the steel was composed by lath martensite, retained austenite films and ε-carbides after different heat treatment processes. And the 22SiMnCrNiMo steel obtained optimal mechanical properties of a yield strength of 1 261 MPa, a tensile strength of 1 548 MPa, an impact toughness of 120 J/ cm 2 , a fracture toughness (K IC ) of 94.8 MPa·m 1/2 and a threshold value (ΔK th ) of 7.1 MPa·m 1/2 when the steel was austenitised at 900°C for 1 h followed by water quenched and then tempered at 320°C for 1 h. The 22SiMnCrNiMo steel exhibited excellent mechanical properties similar to those of the 00Ni18Co-9Mo4Ti maraging steel as well as high resistance to fatigue crack initiation and growth.

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Sintering Mechanism of Pure B₄C Ceramic Prepared by Hot Oscillating Pressing and with Excellent Mechanical Properties

Zhao,

Zhong,

Sun

et al. 2024

Adv Eng Mater

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Pure boron carbide (B4C) ceramics are sintered by hot oscillating pressing at temperatures of 1700–1900 °C for different soaking times. The densification mechanism, grain growth kinetics, and mechanical properties obtained under these sintering conditions are systematically investigated. It is found that the fully densified B4C ceramic is obtained at 1900 °C within 120 min, possessing an excellent combination of hardness (≈38.5 GPa) and fracture toughness (4.8 MPa m1/2). The densification mechanisms during sintering are as follows: viscous flow at the initial stage (relative density D ranged from 55% to 65%) under 1700 °C; lattice diffusion/grain boundary diffusion at the sintering stage (62% < < 75%) of 1800 and 1850 °C; grain boundary sliding by dislocation motion at the late stage (65% < < 82%) of 1700 °C and the sintering stage (75% < D < 90%) at 1800–1900 °C; and dislocation gliding and stacking faults at the final stage (90% < D < 95%) occurring at 1850–1900 °C. The dislocation motion exhibits a critical impact on the densification process of the hot oscillating–pressed B4C ceramic. The grain growth kinetics at 1900 °C is controlled by grain boundary diffusion.

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Grain size dependence of hardness and fracture toughness in pure near fully-dense boron carbide ceramics

Cited by 117 publications

References 36 publications

Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism

Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism

Mechanical Properties and Microstructures of a Novel Low-carbon High-silicon Martensitic Steel

Sintering Mechanism of Pure B₄C Ceramic Prepared by Hot Oscillating Pressing and with Excellent Mechanical Properties

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Grain size dependence of hardness and fracture toughness in pure near fully-dense boron carbide ceramics

Cited by 117 publications

References 36 publications

Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism

Locating Si atoms in Si-doped boron carbide: A route to understand amorphization mitigation mechanism

Mechanical Properties and Microstructures of a Novel Low-carbon High-silicon Martensitic Steel

Sintering Mechanism of Pure B4C Ceramic Prepared by Hot Oscillating Pressing and with Excellent Mechanical Properties

Contact Info

Product

Resources

About

Sintering Mechanism of Pure B₄C Ceramic Prepared by Hot Oscillating Pressing and with Excellent Mechanical Properties