Grain-Size-Dependent Low-Temperature Electrical Resistivity of Polycrystalline Co2MnAl Heusler Alloy Thin Films

Yilgin, Resul; Oogane, Mikihiko; Ando, Yasuo; Miyazaki, T.

doi:10.1007/s10948-016-3957-5

Cited by 4 publications

(1 citation statement)

References 49 publications

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“…This dependency has also been reported by other researchers studying the different Heusler alloy systems including the Fe 2 VAl. 1,32,36) At this point, it is important to note that the crystallite size is estimated by using the XRD peak corresponding to the well-ordered L2 1 structure. This confirms that the transport properties are associated with the thermoelectric properties and are sensitive to the crystallite size in the case of Fe 2 V 0.9 W 0.1 Al systems under investigation.…”

Section: Discussionmentioning

confidence: 99%

Thermoelectric performance of Fe₂V_0.9W_0.1Al thin films deposited on n-type Si substrates

Machda

Singh²,

Kuga

et al. 2023

Jpn. J. Appl. Phys.

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Fe2V0.9W0.1Al thin films are prepared on n-type Si substrates by means of radio-frequency magnetron sputtering with varied substrate temperatures from 743 – 1043 K, then subsequently annealed for one hour in vacuum at 1043 K. The thin films deposited at 1043 K are chemically degraded, exhibiting a low Seebeck coefficient, –65 µVK–1, at 330 K. On the other hand, the films deposited at 943 K possess –100 µVK–1 in Seebeck coefficient at around 330 – 350 K, which is very similar to the Seebeck coefficient of the bulk W-substituted Fe2VAl that possesses well-ordered L21 structure. The maximum power factor of 1.6 mWm–1K–2 was obtained for the sample deposited at 943 K. Accordingly, with the thermal conductivity of 3.5 Wm-1K-1, the figure of merit reached up to ZT = 0.16, which is comparable with Fe2V0.9W0.1Al of bulks and two times larger than that of the thin films of Si-substituted Fe2VAl.

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Section: Discussionmentioning

confidence: 99%

Thermoelectric performance of Fe₂V_0.9W_0.1Al thin films deposited on n-type Si substrates

Machda

Singh²,

Kuga

et al. 2023

Jpn. J. Appl. Phys.

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show abstract

Electronic structure, magnetic and optical properties of quaternary Fe2−x Co x MnAl Heusler alloys

et al. 2017

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Effect of Ga substitution on structural and magnetic properties of Fe50Mn25Al25-xGax Heusler alloys

Mishra

Yadav

et al. 2021

Journal of Alloys and Compounds

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Grain-Size-Dependent Low-Temperature Electrical Resistivity of Polycrystalline Co2MnAl Heusler Alloy Thin Films

Cited by 4 publications

References 49 publications

Thermoelectric performance of Fe₂V_0.9W_0.1Al thin films deposited on n-type Si substrates

Thermoelectric performance of Fe₂V_0.9W_0.1Al thin films deposited on n-type Si substrates

Electronic structure, magnetic and optical properties of quaternary Fe2−x Co x MnAl Heusler alloys

Effect of Ga substitution on structural and magnetic properties of Fe50Mn25Al25-xGax Heusler alloys

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Grain-Size-Dependent Low-Temperature Electrical Resistivity of Polycrystalline Co2MnAl Heusler Alloy Thin Films

Cited by 4 publications

References 49 publications

Thermoelectric performance of Fe2V0.9W0.1Al thin films deposited on n-type Si substrates

Thermoelectric performance of Fe2V0.9W0.1Al thin films deposited on n-type Si substrates

Electronic structure, magnetic and optical properties of quaternary Fe2−x Co x MnAl Heusler alloys

Effect of Ga substitution on structural and magnetic properties of Fe50Mn25Al25-xGax Heusler alloys

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Resources

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Thermoelectric performance of Fe₂V_0.9W_0.1Al thin films deposited on n-type Si substrates

Thermoelectric performance of Fe₂V_0.9W_0.1Al thin films deposited on n-type Si substrates