Grain-Size Effect on a Plasma-Based Copper Etch Process

Liu, Guojun; Kuo, Yue; Ahmed, Shafaat; Buckley, D. H.; Tanaka-Ahmed, Tanjim

doi:10.1149/1.2904937

Cited by 8 publications

(6 citation statements)

References 29 publications

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“…Under the same deposition condition, grains of the same size are uniformly distributed across the line independent of the line width. 67 The narrow line has fewer grain boundaries to initiate voids formation than the wide line has. Therefore, voids are easier to form in the wide line than in the narrow line to cause the quicker breakage of the former.…”

Section: Resultsmentioning

confidence: 99%

Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines

Kuo

2020

ECS J. Solid State Sci. Technol.

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The electromigration failure phenomena of plasma etched copper lines on glass substrates with a titanium tungsten or molybdenum capping layer were studied. The failure of the line showed as the abrupt increase of the line resistance, which corresponded to the drastic change of the temperature. The surface color of the copper line also changed in the failure process. For the uncapped copper line, the color change was due to the surface oxidation at the raised temperature. For the capped line, the color change was contributed by the additional copper component diffused from the bulk copper film due to the raise of the temperature, which enhanced voids formation and shortened the failure time. Under the same current density condition, the copper diffusion into the titanium tungsten capping layer was less serious than that into the molybdenum capping layer, which was the reason of the longer lifetime of the former lines. This research confirms that the capping layer material is critical to the lifetime of the copper line.

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Section: Resultsmentioning

confidence: 99%

Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines

Kuo

2020

ECS J. Solid State Sci. Technol.

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“…38 The annealing step can change the grain size and film resistivity, and therefore, the lifetime of the Cu line. 39 Since the Cu sample in this study was not annealed before the EM stress, its resistance remains high, which can cause the quick raise of temperature and shorten the lifetime. In addition, the CuO x capping layer has a lower thermal conductivity than Cu, i.e., 4.5 W m•K −1 for Cu 2 O and 33 W m -1 •K −1 for CuO vs 401 W m -1 •K −1 for Cu.…”

Section: Resultsmentioning

confidence: 99%

Communication—Exploration of Plasma Oxidized Copper Oxide as a Copper Passivation Layer

Kuo

2022

ECS J. Solid State Sci. Technol.

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Passivation properties of the plasma oxidized copper oxide on the copper line have been studied using the electromigration stress method. The self-aligned copper oxide passivation layer has the unique property of gettering copper atoms diffused through it at the high temperature raised from the stress current induced Joule heating. On the other hand, the line broken time is shortened with the increase of the copper oxide passivation layer thickness. Therefore, for the passivation application, a thin copper oxide layer is better than a thick copper oxide layer.

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“…결정립 크기에 따라 강도 및 연성이 변화하며, 1,2) 결정방위 및 결정립계의 특성은 전기전도도, 부식 및 electromigration 특성에 영향을 미친다. [3][4][5] 연성인쇄회로 기판의 유연성(flexibility)을 결정하는 구리박막의 내굴곡 성(bending resistance)은 결정립 크기 및 결정립계의 특 성에 의해 변화한다. 6…”

Section: 서 론unclassified

Microstructural Characteristics of Electro-Plated Cu Films by DC and Pulse Systems

윤지숙¹,

박찬수²,

홍순현³

et al. 2014

Korean. J. Mater. Res.

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The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

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Grain-Size Effect on a Plasma-Based Copper Etch Process

Cited by 8 publications

References 29 publications

Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines

Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines

Communication—Exploration of Plasma Oxidized Copper Oxide as a Copper Passivation Layer

Microstructural Characteristics of Electro-Plated Cu Films by DC and Pulse Systems

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