Grain size effects on the dielectric constant of CaCu3Ti4O12 ceramics

Brizé, Virginie; Gruener, G.; Wolfman, J.; Fatyeyeva, Kateryna; Tabellout, M.; Gervais, Monique; Gervais, F.

doi:10.1016/j.mseb.2006.01.004

Cited by 142 publications

(65 citation statements)

References 23 publications

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“…The principal application for such a dielectric ceramic is for capacitors in electronic circuits and as electrical insulators [2]. Indeed, it presents a high dielectric constant almost independent of frequency in a huge frequency range (10 2 -10 6 Hz) as well as has a high thermal stability over a wide temperature range (100-600 K) [3,4,5]. However, the properties of bulk samples are not well understood and are the object of numerous discussions.…”

Section: Introductionmentioning

confidence: 99%

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics

Kouassi¹

2017

IJMSA

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Abstract:In this work, effect of vanadium doping of CaCu 3 Ti 4 O 12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C -160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.

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Section: Introductionmentioning

confidence: 99%

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics

Kouassi¹

2017

IJMSA

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“…Recently, ACu 3 Ti 4 O 12 oxides type with high dielectric constant were found and CaCu 3 Ti 4 O 12 (CCTO) [1] presented an exceptional behavior with potential technological applications such as capacitors and microwave devices. Values of dielectric constants of CCTO ranging from 3000 to 300,000 have been reported [2][3][4][5] and show that these dielectric properties are very sensitive to manufacturing process, and vary with time, temperature, the sintering atmosphere and the annealing [6]. Authors also report the influence of different doping CCTO solid phase.…”

Section: Introductionmentioning

confidence: 88%

“…Various theories have been developed to explain the high permittivity of the CCTO. It has been proposed that internal insulating barrier (IBLC: Internal Barrier Layer Capacitor) with a structure of conductive grains and insulating grain boundaries is responsible for the high permittivity in polycrystalline ceramics [6,18]. While other theories suggest the existence of areas inside the insulating grains CCTO [19] or forming an insulating layer at the interface very fine material / electrodes which induces a polarization phenomenon at the electrodes [20].…”

Section: Introductionmentioning

confidence: 99%

Dielectrics Properties and Temperature Dependence of Electron Spin Resonance of Doped Molybdenum CCTO

Kouassi¹

2017

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Abstract:The role perovskite-type CaCu 3 Ti 4 O 12 (CCTO) dope by molybdenum (Mo) on the microstructure, dielectric properties and the temperature dependence of Electron Spin Resonance (ESR) has been investigated in this work. The solid state reaction has been used to synthesize CCTO ceramic samples. Substitution on Ti-site by Mo helps to increase the grain size of samples and therefore increase the dielectric constant according to the IBLC theory. There is no great difference between the ESR spectra of pure CCTO and CCTO doped by Molybdenum as a function of temperature. For a given temperature, ESR signal spectrum intensity increases as the Mo content increases. The magnetic susceptibility varies according to the composition only when the temperature is higher than 70K. The antiferromagnetic character of the CCTO decreases when the Mo content increases.

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“…The high permittivity at low frequency has been observed in CCTO and BTO ferroelectrics [5][6][7][8][9][10][11][12][13] . The Internal Barrier Layer Capacitor (IBLC) effect is related to the micro-structure, composed of (semi)conducting grains separated by insulating grain boundaries.…”

Section: +mentioning

confidence: 99%

Effect of temperature and time on properties of spark plasma sintered NiCuZn: Co ferrite

Zehani

Mazaleyrat

Loyau

2011

Journal of Applied Physics

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Spark Plasma Sintering is a powerfal method to produce fine grain dense ferrite at low temperature. However, the process, usually conducted in neutral atmosphere in a carbon die, yields carbon surface deposition and reduction of F e 3+ into F e 2+ . It's shown that subsequent annealing in air can remove carbon and, under some conditions, produce complete oxidation of F e 2+ ions. Regular values of the resistivity and permittivity (resp. 1 MΩm, 13 ε 0 ) are recovered for most samples annealed not higher than 750• C. Relatively high value of the permeability (up to 240) and high merit factor (µ s × f r > 5 GHz) have been achieved.

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Grain size effects on the dielectric constant of CaCu3Ti4O12 ceramics

Cited by 142 publications

References 23 publications

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> Ceramics

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> Ceramics

Dielectrics Properties and Temperature Dependence of Electron Spin Resonance of Doped Molybdenum CCTO

Effect of temperature and time on properties of spark plasma sintered NiCuZn: Co ferrite

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Grain size effects on the dielectric constant of CaCu3Ti4O12 ceramics

Cited by 142 publications

References 23 publications

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu&lt;sub&gt;3&lt;/sub&gt;Ti&lt;sub&gt;4&lt;/sub&gt;O&lt;sub&gt;12&lt;/sub&gt; Ceramics

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu&lt;sub&gt;3&lt;/sub&gt;Ti&lt;sub&gt;4&lt;/sub&gt;O&lt;sub&gt;12&lt;/sub&gt; Ceramics

Dielectrics Properties and Temperature Dependence of Electron Spin Resonance of Doped Molybdenum CCTO

Effect of temperature and time on properties of spark plasma sintered NiCuZn: Co ferrite

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Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> Ceramics

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> Ceramics