displays based on individual chip transfer have already been demonstrated in a 150 inch commercial TV on the Consumer Electronics Show (CES) 2020. However, due to the time-consuming and expensive process of multimillion individual chip transfer for UHD TV, chip-based μLED has limitation in the mass production of low-cost μLED displays. In contrast, thinfilm μLED based on mass transfer of more than 10 000 LED chips in one time has great potential to reduce the product price of μLED panels. [1-4] Although many innovative studies of thin-film μLED technologies have been performed, little effort has been devoted to the fundamental materials in μLED devices and their effect on performance, reliability, and adhesion control. Material issues with thin-film μLED are related to the epitaxial wafer, target substrate, electrode, transfer, and packaging. [3,5-19] Glass is currently one of the most widely used display substrates for TVs, smart phones, and tablet PCs. [20-23] Electrode materials for thin-film μLEDs on a glass substrate need to be carefully optimized to improve RC delay, power efficiency, stability, and production cost. Cu is an attractive material for thin-film μLED electrodes due to its remarkable conductivity (5.98 × 10 5 S cm-1), [24] high robustness, [25,26] and cheap price (≈6500 times cheaper than Au), [27] A robust Cu conductor on a glass substrate for thin-film μLEDs using the flash-induced chemical/physical interlocking between Cu and glass is reported. During millisecond light irradiation, CuO nanoparticles (NPs) on the display substrate are transformed into a conductive Cu film by reduction and sintering. At the same time, intensive heating at the boundary of CuO NPs and glass chemically induces the formation of an ultrathin Cu 2 O interlayer within the Cu/glass interface for strong adhesion. Cu nanointerlocking occurs by transient glass softening and interface fluctuation to increase the contact area. Owing to these flash-induced interfacial interactions, the flash-activated Cu electrode exhibits an adhesion energy of 10 J m −2 , which is five times higher than that of vacuum-deposited Cu. An AlGaInP thin-film vertical μLED (VLED) forms an electrical interconnection with the flash-induced Cu electrode via an ACF bonding process, resulting in a high optical power density of 41 mW mm −2. The Cu conductor enables reliable VLED operation regardless of harsh thermal stress and moisture infiltration under a high-temperature storage test, temperature humidity test, and thermal shock test. 50 × 50 VLED arrays transferred onto the flash-induced robust Cu electrode show high illumination yield and uniform distribution of forward voltage, peak wavelength, and device temperature.