Graphene Materials - Advanced Applications 2017
DOI: 10.5772/67807
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Graphene against Other Two-Dimensional Materials: A Comparative Study on the Basis of Photonic Applications

Abstract: Two-dimensional materials represent the basis of technological development to produce applications with high added value for nanoelectronics, photonics, and optoelectronics. In first decades of this century, these materials are impelling this development through materials based on carbon, silicon, germanium, tin, phosphorus, arsenic, antimony, and boron. 2D materials for photonic applications used until now are graphene, silicene, germanene, stanene, phosphorene, arsenene, antimonene, and borophene. In this wo… Show more

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Cited by 4 publications
(4 citation statements)
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“…√ ατ [(s/cm) Regarding Figure 2, the demonstrated carrier lifetime in two-dimensional materials is at the nanosecond level and is approximately five orders of magnitude lower than for the HgCdTe ternary alloy. The dominant recombination pathway for TMDs (MoS 2 , MoSe 2 and WSe 2 ) is exciton recombination [14][15][16]. Considering the experimental data collected above for LWIR HgCdTe (α = 2.2 × 10 3 cm −1 , τ = 0.5 ms) and TMDs (α = 2 × 10 5 cm −1 , τ = 1 ns), it is also interesting to compare the estimated…”
Section: Materials Parametersmentioning
confidence: 99%
“…√ ατ [(s/cm) Regarding Figure 2, the demonstrated carrier lifetime in two-dimensional materials is at the nanosecond level and is approximately five orders of magnitude lower than for the HgCdTe ternary alloy. The dominant recombination pathway for TMDs (MoS 2 , MoSe 2 and WSe 2 ) is exciton recombination [14][15][16]. Considering the experimental data collected above for LWIR HgCdTe (α = 2.2 × 10 3 cm −1 , τ = 0.5 ms) and TMDs (α = 2 × 10 5 cm −1 , τ = 1 ns), it is also interesting to compare the estimated…”
Section: Materials Parametersmentioning
confidence: 99%
“…The MoS 2 /graphene heterostructure device exhibits sensitive photoresponse at bias voltages of 2 V and 4 V for wavelengths of 650 nm with light power intensity spanning from ~1 mW/cm 2 to 3 mW/cm 2 . The MoS 2 /Gra photodetector has a response of 39.44 mA/W and relatively high speci c detectivity of 2.02×10 10 Jones and e ciency of 7.54%, at 4V bias voltage and that of MoS 2 photodetector are 0.55 µA, 6.11 mA/W, 3.4 ×10 9 Jones, and 1.16%, respectively. Since the photoresponse performance of the MoS 2 /Gra photodetector is greatly improved over the sole MoS 2 photodetector device, it is a potential candidate for building future ultrasensitive devices.…”
Section: Discussionmentioning
confidence: 99%
“…In the recent decade, two-dimensional materials have attracted signi cant research interest owing to their exceptional electrical, optical, and mechanical properties [1][2][3][4] that depend on the layer thickness and crystalline size [5]. Examples of this materials include; graphene, silicene [6], hexagonal boron nitride [7], phosphorene, transition metal dichalcogenides (TMDs) (e.g., MoS 2 , MoSe 2 WS 2 , WSe 2 ) [8], metal oxides (e.g., MoO 3 ) [9], metal halides (e.g., MgBr 2 ) [10], etc. Among the various layered materials apart from graphene, TMDs have received much attention due to their excellent performances in electronics and optoelectronics.…”
Section: Introductionmentioning
confidence: 99%
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