Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials 2012
DOI: 10.7567/ssdm.2012.k-7-3
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Graphene, an ideal material for spintronics?

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“…We then find that the carrier density scales linearly with gate voltage, as it should. The slope α = ∆n/∆V g = 7.8 × 10 9 cm −2 V −1 is slightly larger than the value, 4.7 ×10 9 cm −2 V −1 , estimated from the formula for a parallel plate capacitor, as expected, since the ribbon width [19] is smaller than the distance to the gate (the value of α agrees quantitatively with a recent study of suspended graphene in the quantum Hall regime [20], where an enhanced capacitance at the edges was found). By extrapolating to B = 0 T, we find that charge neutrality occurs at V g = V CN P = 8.5 V (see Fig.…”
supporting
confidence: 87%
“…We then find that the carrier density scales linearly with gate voltage, as it should. The slope α = ∆n/∆V g = 7.8 × 10 9 cm −2 V −1 is slightly larger than the value, 4.7 ×10 9 cm −2 V −1 , estimated from the formula for a parallel plate capacitor, as expected, since the ribbon width [19] is smaller than the distance to the gate (the value of α agrees quantitatively with a recent study of suspended graphene in the quantum Hall regime [20], where an enhanced capacitance at the edges was found). By extrapolating to B = 0 T, we find that charge neutrality occurs at V g = V CN P = 8.5 V (see Fig.…”
supporting
confidence: 87%