Graphene as a novel single photon counting optical and IR photodetector

Abstract

Bilayer graphene has many unique optoelectronic properties [1], including a tuneable band gap, that make it possible to develop new and more efficient optical and nanoelectronic devices. We have developed a Monte Carlo simulation for a single photon counting photodetector incorporating bilayer graphene. Our results show that, conceptually it would be feasible to manufacture a single photon counting photodetector (with colour sensitivity) from bilayer graphene for use across both optical and infrared wavelengths. Our concept exploits the high carrier mobility and tuneable band gap associated with a bilayer graphene approach. This allows for low noise operation over a range of cryogenic temperatures, thereby reducing the cost of cryogens with a trade off between resolution and operating temperature. The results from this theoretical study now enable us to progress onto the manufacture of prototype photon counters at optical and IR wavelengths that may have the potential to be groundbreaking in some scientific research applications.

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

“…Initially, we developed a number of simulations for our bilayer graphene single photon counting photodetector, which indicate the fundamental operational properties and parameters of the detector. We firstly calculate the density of states and investigate the optimum operational window [ 82 ]. We then use a Monte Carlo simulation using a Gillespie Algorithm [ 83 ] to simulate the absorption of an incident photon on the graphene lattice, the excitation of a photoelectron and its subsequent relaxation in the conduction band.…”

“…We have developed a Monte Carlo simulation to determine the likely properties of our photodetector [ 82 ]. Our model assumes that we operate within the limit shown in Figure 2 b, i.e., electrons in the conduction band result solely from the initial photoexcitation (or subsequent relaxations).…”

Multiple-graphene layer based p++–n–n−–n++ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

“…Graphene based materials and devices have already established their exceptionally good optical and electrical properties for photo detection in novel applications [1,2]. However, the low light absorption in single layer graphene, as well as, lack of band-gap, poses some constraints for its use in optoelectronic device applications [3,4]. Introduction of multiple graphene layer, on the other hand, could address these issues by improving the effective band-gap energy, thermal conductivity and overall carrier mobility for wide range frequency applications [5][6][7].…”