Graphene Audio Voltage Amplifier

Guerriero, Erica; Polloni, Laura; Rizzi, Laura Giorgia; Bianchi, Massimiliano; Mondello, Giovanni; Sordan, Roman

doi:10.1002/smll.201102141

Cited by 58 publications

(68 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several recent works also demonstrated voltage gain in graphene transistors showing possibility of graphene-based amplifiers and radiofrequency front-ends in communication system [36][37][38] . The combination of an efficient modulation method with a reliable radiofrequency front-end will be the key factor in determining the practicality of mobile and flexible apparatus.…”

Section: Discussionmentioning

confidence: 98%

Flexible and transparent all-graphene circuits for quaternary digital modulations

Lee

Liu

et al. 2012

Nat Commun

View full text Add to dashboard Cite

In modern communication systems, modulation is a key function that embeds the baseband signal (information) into a carrier wave so that it can be successfully broadcasted through a medium such as air or cables. Here we report a flexible all-graphene modulator circuit with the capability of encoding a carrier signal with quaternary digital information. By exploiting the ambipolarity and the nonlinearity in a graphene transistor, we demonstrate two types of quaternary modulation schemes: quaternary amplitude-shift keying and quadrature phase-shift keying. Remarkably, both modulation schemes can be realized with just 1 and 2 all-graphene transistors, respectively, representing a drastic reduction in circuit complexity when compared with conventional modulators. In addition, the circuit is not only flexible but also highly transparent (~95% transmittance) owing to its all-graphene design with every component (channel, interconnects, load resistor and source/drain/gate electrodes) fabricated from graphene films.

show abstract

Section: Discussionmentioning

confidence: 98%

Flexible and transparent all-graphene circuits for quaternary digital modulations

Lee

Liu

et al. 2012

Nat Commun

View full text Add to dashboard Cite

show abstract

“…2D atomic crystal amplifiers have been studied widely due to their unique structure and electronic performance, and they can provide the approaches to remove the challenges in conventional amplifiers. [115][116][117][118] Figure 8 shows typical graphene and monolayer MoS 2 amplifiers. 117,118 For graphene amplifiers, complementary operation was achieved between the Dirac points of the two graphene FETs (G1 and G2 in Fig.…”

Section: Inverters (Not Gate)mentioning

confidence: 99%

“…[115][116][117][118] Figure 8 shows typical graphene and monolayer MoS 2 amplifiers. 117,118 For graphene amplifiers, complementary operation was achieved between the Dirac points of the two graphene FETs (G1 and G2 in Fig. 8c), exhibiting a voltage gain of 11.4 dB and a À3 dB frequency response up to 70 kHz, with a unity-gain frequency of 360 kHz.…”

Section: Inverters (Not Gate)mentioning

confidence: 99%

Two-Dimensional Atomic Crystals: Paving New Ways for Nanoelectronics

Fan

Djerdj

2015

Journal of Elec Materi

View full text Add to dashboard Cite

Two-dimensional (2D) atomic crystals are attractive for use in next-generation nanoelectronics, due to their unique performances, which may lead to the resolution of the technological and fundamental challenges in semiconductor industry. Based on the introduction of 2D atomic crystal-based transistors and ambipolar behavior, the review presents a brief summary of 2D atomic crystal integration circuits, including memory, logic gate, amplifier, inverter, oscillator, mixer, switch and modulator. The devices show promising performances for the application in future nanoelectronics. In particular, the 2D atomic crystals, such as graphene, demonstrate good compatibility with the existing semiconductor process. The quaternary digital modulations have been achieved with flexible and transparent all-graphene circuits. Moreover, the heterojunction based on 2D atomic crystals may enable new devices beyond conventional field-effect transistors. The results make us be optimistic that practical 2D atomic crystal technologies with complex functionality will be achieved in the near future. Therefore, 2D atomic crystals are paving new ways for nanoelectronics.

show abstract

“…The dielectric is prepared by repeated deposition and subsequent thermal oxidation of thin layers of Al metal, a technique which frequently appears in the literature as an alternative to atomic layer deposition (ALD). [17][18][19] With accurate modeling, a number of relevant device parameters including the density of interface states, the magnitude of surface potential fluctuations, and the presence of a narrow energy gap in bilayers induced by the spontaneous polarization of the substrate are assessed in a single experiment. Supporting measurements addressing surface potential fluctuations, hysteresis, and charge injection are also discussed in order to facilitate a deeper understanding of the CV/GV data.…”

Section: Introductionmentioning

confidence: 99%

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

et al. 2016

View full text Add to dashboard Cite

Capacitance voltage (CV) measurements are performed on planar MOS capacitors with an Al2O3 dielectric fabricated in hydrogen intercalated monolayer and bilayer graphene grown on 6H-SiC as a function of frequency and temperature. Quantitative models of the CV data are presented in conjunction with the measurements in order to facilitate a physical understanding of graphene MOS systems. An interface state density of order 2 . 10(12)eV(-1)cm(-2) is found in both material systems. Surface potential fluctuations of order 80-90meV are also assessed in the context of measured data. In bilayer material, a narrow bandgap of 260meV is observed consequent to the spontaneous polarization in the substrate. Supporting measurements of material anisotropy and temperature dependent hysteresis are also presented in the context of the CV data and provide valuable insight into measured and modeled data. The methods outlined in this work should be applicable to most graphene MOS systems. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Funding Agencies|European Science Foundation (ESF) under EUROCORES Program EuroGRAPHENE; EU [604391]; Swedish Foundation for Strategic Research (SSF); Knut and Alice Wallenberg Foundation (KAW)

show abstract

Graphene Audio Voltage Amplifier

Cited by 58 publications

References 38 publications

Flexible and transparent all-graphene circuits for quaternary digital modulations

Flexible and transparent all-graphene circuits for quaternary digital modulations

Two-Dimensional Atomic Crystals: Paving New Ways for Nanoelectronics

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

Contact Info

Product

Resources

About