Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

Lecce, Valerio Di; Grassi, Roberto; Gnudi, A.; Gnani, Elena; Reggiani, Susanna; Baccarani, G.

doi:10.1016/j.sse.2015.07.006

Cited by 7 publications

(3 citation statements)

References 29 publications

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“…As predicted by simulations, in order to realize THz operation, the emitter potential barrier which is between the emitter metal and the emitter-to-base tunneling layer should be <0.4 eV, which remains an engineering issue 15,24,25 . To solve this problem, pioneering theoretical study on graphene-base heterojunction transistors has been done with a device structure of silicon–graphene–silicon 25,26 . Theoretically, THz operation can be realized when the collector current is >10 6 A cm −2 .…”

Section: Introductionmentioning

confidence: 99%

A vertical silicon-graphene-germanium transistor

Liu

Chen

et al. 2019

Nat Commun

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Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction transistor has been proposed theoretically where the graphene base is sandwiched by silicon layers. Here we demonstrate a vertical silicon-graphene-germanium transistor where a Schottky emitter constructed by single-crystal silicon and single-layer graphene is achieved. Such Schottky emitter shows a current of 692 A cm−2 and a capacitance of 41 nF cm−2, and thus the alpha cut-off frequency of the transistor is expected to increase from about 1 MHz by using the previous tunnel emitters to above 1 GHz by using the current Schottky emitter. With further engineering, the semiconductor-graphene-semiconductor transistor is expected to be one of the most promising devices for ultra-high frequency operation.

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Section: Introductionmentioning

confidence: 99%

A vertical silicon-graphene-germanium transistor

Liu

Chen

et al. 2019

Nat Commun

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“…This potentially allows for very high cutoff frequencies ( f T ) up to the THz regime for this kind of transistor. Indeed, cutoff frequencies much larger than 1 THz have been predicted theoretically if the collector current exceeds 10 6 A/cm 2 . Further details on the device physics and functionality can be found in refs and .…”

Section: Introductionmentioning

confidence: 96%

“…Indeed, cutoff frequencies much larger than 1 THz have been predicted theoretically if the collector current exceeds 10 6 A/cm 2 . Further details on the device physics and functionality can be found in refs and . Compared to lateral graphene field effect transistors (GFET), which have already demonstrated maximum cutoff frequencies of 427 GHz, a natural output current saturation can be achieved with the GBHT even with the zero-bandgap material.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Electrical Properties of Optimized Vertical Graphene-Base Hot Electron Transistors

Strobel

Chavarin

Völkel

et al. 2023

ACS Appl. Electron. Mater.

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The arrival of high-mobility two-dimensional materials like graphene leads to the renaissance of former vertical semiconductor–metal–semiconductor (SMS) hot electron transistors. Because of the monolayer thickness of graphene, improved SMS transistors with a semimetallic graphene-base electrode are now feasible for high-frequency applications. In this study we report about a device that consists of amorphous silicon, graphene, and crystalline silicon. For the first time, this device is fabricated by a four-mask lithography process which leads to significant improvements in the device performance. A strongly increased common-emitter current gain of 2% could be achieved while the on–off ratio improved to 1.6 × 105, which is already higher than predicted theoretically. This could be mainly attributed to better interface characteristics and decreased lateral dimensions of the devices. A cutoff frequency of approximately 26 MHz could be forecasted based on the DC measurements of the device.

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A silicon-graphene-silicon transistor with an improved current gain

Liu

Yang

et al. 2022

Journal of Materials Science & Technology

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Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

Cited by 7 publications

References 29 publications

A vertical silicon-graphene-germanium transistor

A vertical silicon-graphene-germanium transistor

Enhanced Electrical Properties of Optimized Vertical Graphene-Base Hot Electron Transistors

A silicon-graphene-silicon transistor with an improved current gain

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