2021
DOI: 10.1016/j.carbon.2020.10.048
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Graphene-based field effect transistor biosensors for breast cancer detection: A review on biosensing strategies

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Cited by 94 publications
(60 citation statements)
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“…Figure 4 A shows the ambipolar transfer characteristics of a GFET resulting in a V-shaped curve where the left branch represents the increasing density of positive charge carriers (holes) and the right branch represents the increasing density of negative charge carriers (electrons) [ 21 ]. The critical transition voltage between the two regions where the current reaches a minimum is called the charge neutrality point (V CNP ) or the Dirac voltage (V Dirac ) [ 22 ]. The slope of the transfer curve ( in each region indicates the transconductance ( for the hole and the electron, respectively and can be calculated by measuring the slopes of each branch of Figure 4 A.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 4 A shows the ambipolar transfer characteristics of a GFET resulting in a V-shaped curve where the left branch represents the increasing density of positive charge carriers (holes) and the right branch represents the increasing density of negative charge carriers (electrons) [ 21 ]. The critical transition voltage between the two regions where the current reaches a minimum is called the charge neutrality point (V CNP ) or the Dirac voltage (V Dirac ) [ 22 ]. The slope of the transfer curve ( in each region indicates the transconductance ( for the hole and the electron, respectively and can be calculated by measuring the slopes of each branch of Figure 4 A.…”
Section: Resultsmentioning
confidence: 99%
“…The larger the value of the on-off ratio, the better the sensitivity of the GFET since the device will exhibit better immunity to noise. An on-off ratio value of ~8 was calculated for the used devices which is above average for GFET devices grown by a CVD technique [ 22 ].…”
Section: Resultsmentioning
confidence: 99%
“…They reported a dual-gate ISFET sensor structure, as depicted in Figure 12 , which is developed in a standard 0.18 ”m SOI-CMOS process followed by an additional backside process [ 81 ]. Using poly gate (PG) (see Figure 12 ) as the second gate of double-gated CMOS standard ISFET structure, helped them to significantly improve the characteristics of ISFETs such as 155 times improvement in signal-to-noise ratio (SNR), 53 times improvement in drift rates, 3.7 times hysteresis reduction, and last but not least, 7.5 times sensitivity increment [ 82 ]. Back gate structure has been used frequently in FET structures in which nanomaterials (please see Figure 3 b) were deposited on the oxide and played the role of main conductive channel.…”
Section: Sensing Mechanism and Different Structures Of Chem/biofetsmentioning
confidence: 99%
“…Back gate structure has been used frequently in FET structures in which nanomaterials (please see Figure 3 b) were deposited on the oxide and played the role of main conductive channel. The most noteworthy ones are CNT-based FETs [ 83 ], grapheme-FETs [ 82 ], silicon nanowire (SiNW)-FETs [ 84 ], MoS2 FETs [ 85 ], MOF FETs [ 42 ], ZnO FETs [ 42 , 86 ] and other nanomaterials utilized the double gate and in the form of a solution gate and a back gate for sensing procedures.…”
Section: Sensing Mechanism and Different Structures Of Chem/biofetsmentioning
confidence: 99%
“…The application of carbon or graphene-based nanomaterials especially in the field of electrochemical biosensors has become more intense the last decade [90] , [91] , [92] , [93] , [94] , since it is found that the nano-structuring of the transducer-electrode improves by far all their operation and efficiency features. For example, Chin et al [95] modifying the screen printed electrodes with carbon nanoparticles ascertained that the charge transfer kinetics is significantly enhanced, and so the biosensor current response was improved by 63%.…”
Section: Carbon and Graphene-based Sars-cov-2 Electrochemical Biosensorsmentioning
confidence: 99%