Graphene‐Based Terahertz Devices: Concepts and Characteristics

Ryzhii, V.; Ryzhii, M.; Satou, Akira; Ryabova, Nadezhda; Otsuji, Taiichi; Mitin, Vladimir; Vasko, F. T.; Dubinov, A. A.; Aleshkin, V. Ya.; Shur, M. S.

doi:10.1002/9780470649343.ch25

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…Further development of the GTTS-based devices using the Coulomb carrier drag can be realized using periodic structures with the p + -i-n + GTTSs connected in series (with the reverse biased p + -i-n + GTTSs and forward biased n + -p + -junctions connecting in series the neighboring GTTSs [30,31] -the cascade GTTS. In such periodic structures one can expect the reinforces THz emission and the self-excitation of the propagating plasma waves (associated with the plasma instability considered above) with the periods equal to the multiples of the structure period resulting in an additional functionality.…”

Section: Commentsmentioning

confidence: 99%

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Ryzhii,

Satou

et al. 2021

Preprint

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We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n-and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p + -p-i-n-n + graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n-and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the plasma instability and the self-excitation of the plasma oscillations in the terahertz (THz) frequency range. This effect might be used for the generation of the THz radiation.

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Section: Commentsmentioning

confidence: 99%

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Ryzhii,

Satou

et al. 2021

Preprint

Self Cite

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Recent Progress in Terahertz Metasurfaces

Al-Naib

Withayachumnankul

2017

J Infrared Milli Terahz Waves

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Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

Bhardwaj

Sensale‐Rodriguez

Xing

et al. 2016

Journal of Applied Physics

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A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.

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Graphene‐Based Terahertz Devices: Concepts and Characteristics

Cited by 3 publications

References 21 publications

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Recent Progress in Terahertz Metasurfaces

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

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